The authors have developed a fabrication method for suspended metallic single-electron transistors
SETs utilizing a combination of conventional angle evaporation technique and ashing of the
underlying organic polymer. The authors’ Al-based suspended devices exhibit clear Coulomb
blockade effects typical for conventional SETs. The measured low-frequency charge noise is rather
low but still within the range reported for conventional Al devices. We suggest that the noise level
can be further reduced by decreasing the effective SET temperature.