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Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air. / Adamopoulos, George; Thomas, Stuart; Bradley, Donal D. C. et al.
In: Applied Physics Letters, Vol. 98, No. 12, 123503, 21.03.2011, p. -.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Adamopoulos, G, Thomas, S, Bradley, DDC, McLachlan, MA & Anthopoulos, TD 2011, 'Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air', Applied Physics Letters, vol. 98, no. 12, 123503, pp. -. https://doi.org/10.1063/1.3568893

APA

Adamopoulos, G., Thomas, S., Bradley, D. D. C., McLachlan, M. A., & Anthopoulos, T. D. (2011). Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air. Applied Physics Letters, 98(12), -. Article 123503. https://doi.org/10.1063/1.3568893

Vancouver

Adamopoulos G, Thomas S, Bradley DDC, McLachlan MA, Anthopoulos TD. Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air. Applied Physics Letters. 2011 Mar 21;98(12):-. 123503. doi: 10.1063/1.3568893

Author

Adamopoulos, George ; Thomas, Stuart ; Bradley, Donal D. C. et al. / Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air. In: Applied Physics Letters. 2011 ; Vol. 98, No. 12. pp. -.

Bibtex

@article{c394fadd36cc47e9a6c2279e7c96d792,
title = "Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air",
abstract = "We report the application of ambient spray pyrolysis for the deposition of high-k polycrystalline Y2O3 and amorphous Al2O3 dielectrics and their use in low-voltage ZnO thin-film transistors. The films are studied by means of atomic force microscopy, UV-visible absorption spectroscopy, impedance spectroscopy, and field-effect measurements. ZnO transistors based on spray pyrolysed Y2O3 and Al2O3 dielectrics show low leakage currents, and hysteresis-free operation with a maximum electron mobility of 34 cm(2)/V s and current on/off ratio on the order of 10(5). This work is a significant step toward high-performance oxide electronics manufactured using simple and scalable processing methods. ",
keywords = "ALUMINUM-OXIDE FILMS, CHEMICAL-VAPOR-DEPOSITION, ATOMIC LAYER DEPOSITION, GATE DIELECTRICS, ELECTRICAL-PROPERTIES, Transparent Electronics ",
author = "George Adamopoulos and Stuart Thomas and Bradley, {Donal D. C.} and McLachlan, {Martyn A.} and Anthopoulos, {Thomas D.}",
year = "2011",
month = mar,
day = "21",
doi = "10.1063/1.3568893",
language = "English",
volume = "98",
pages = "--",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "12",

}

RIS

TY - JOUR

T1 - Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air

AU - Adamopoulos, George

AU - Thomas, Stuart

AU - Bradley, Donal D. C.

AU - McLachlan, Martyn A.

AU - Anthopoulos, Thomas D.

PY - 2011/3/21

Y1 - 2011/3/21

N2 - We report the application of ambient spray pyrolysis for the deposition of high-k polycrystalline Y2O3 and amorphous Al2O3 dielectrics and their use in low-voltage ZnO thin-film transistors. The films are studied by means of atomic force microscopy, UV-visible absorption spectroscopy, impedance spectroscopy, and field-effect measurements. ZnO transistors based on spray pyrolysed Y2O3 and Al2O3 dielectrics show low leakage currents, and hysteresis-free operation with a maximum electron mobility of 34 cm(2)/V s and current on/off ratio on the order of 10(5). This work is a significant step toward high-performance oxide electronics manufactured using simple and scalable processing methods. 

AB - We report the application of ambient spray pyrolysis for the deposition of high-k polycrystalline Y2O3 and amorphous Al2O3 dielectrics and their use in low-voltage ZnO thin-film transistors. The films are studied by means of atomic force microscopy, UV-visible absorption spectroscopy, impedance spectroscopy, and field-effect measurements. ZnO transistors based on spray pyrolysed Y2O3 and Al2O3 dielectrics show low leakage currents, and hysteresis-free operation with a maximum electron mobility of 34 cm(2)/V s and current on/off ratio on the order of 10(5). This work is a significant step toward high-performance oxide electronics manufactured using simple and scalable processing methods. 

KW - ALUMINUM-OXIDE FILMS

KW - CHEMICAL-VAPOR-DEPOSITION

KW - ATOMIC LAYER DEPOSITION

KW - GATE DIELECTRICS

KW - ELECTRICAL-PROPERTIES

KW - Transparent Electronics

U2 - 10.1063/1.3568893

DO - 10.1063/1.3568893

M3 - Journal article

VL - 98

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 123503

ER -