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Magnetic field-dependent photoluminescence linewidths as a probe of disorder length scales in quantum wells.

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Magnetic field-dependent photoluminescence linewidths as a probe of disorder length scales in quantum wells. / Bansal, Bhavtosh; Hayne, M; Arora, B A et al.
In: Applied Physics Letters, Vol. 91, No. 25, 251108, 17.12.2007.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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APA

Bansal, B., Hayne, M., Arora, B. A., & Moshchalkov, V. V. (2007). Magnetic field-dependent photoluminescence linewidths as a probe of disorder length scales in quantum wells. Applied Physics Letters, 91(25), Article 251108. https://doi.org/10.1063/1.2825417

Vancouver

Bansal B, Hayne M, Arora BA, Moshchalkov VV. Magnetic field-dependent photoluminescence linewidths as a probe of disorder length scales in quantum wells. Applied Physics Letters. 2007 Dec 17;91(25):251108. doi: 10.1063/1.2825417

Author

Bansal, Bhavtosh ; Hayne, M ; Arora, B A et al. / Magnetic field-dependent photoluminescence linewidths as a probe of disorder length scales in quantum wells. In: Applied Physics Letters. 2007 ; Vol. 91, No. 25.

Bibtex

@article{203c561d7d0543f8a4b0400cf1f66192,
title = "Magnetic field-dependent photoluminescence linewidths as a probe of disorder length scales in quantum wells.",
abstract = "Photoluminescence from highly disordered GaAs quantum wells is studied in magnetic fields up to 50 T. The monotonic decrease of the photoluminescence linewidth with increasing quantum well thickness indicates that interface roughness is the primary source of line broadening. The magnetic field-dependent exciton linewidth shows an unexpected behavior. We observe not only just a monotonic increase in linewidth but also a field-dependent decreasing linewidth in thicker quantum wells. These observations are understood by postulating the existence of two correlation lengths for the interface fluctuations, one much smaller than the exciton size and the other one of the order of the exciton size.",
author = "Bhavtosh Bansal and M Hayne and Arora, {B A} and Moshchalkov, {Victor V.}",
note = "{\textcopyright} 2007 American Institute of Physics",
year = "2007",
month = dec,
day = "17",
doi = "10.1063/1.2825417",
language = "English",
volume = "91",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "25",

}

RIS

TY - JOUR

T1 - Magnetic field-dependent photoluminescence linewidths as a probe of disorder length scales in quantum wells.

AU - Bansal, Bhavtosh

AU - Hayne, M

AU - Arora, B A

AU - Moshchalkov, Victor V.

N1 - © 2007 American Institute of Physics

PY - 2007/12/17

Y1 - 2007/12/17

N2 - Photoluminescence from highly disordered GaAs quantum wells is studied in magnetic fields up to 50 T. The monotonic decrease of the photoluminescence linewidth with increasing quantum well thickness indicates that interface roughness is the primary source of line broadening. The magnetic field-dependent exciton linewidth shows an unexpected behavior. We observe not only just a monotonic increase in linewidth but also a field-dependent decreasing linewidth in thicker quantum wells. These observations are understood by postulating the existence of two correlation lengths for the interface fluctuations, one much smaller than the exciton size and the other one of the order of the exciton size.

AB - Photoluminescence from highly disordered GaAs quantum wells is studied in magnetic fields up to 50 T. The monotonic decrease of the photoluminescence linewidth with increasing quantum well thickness indicates that interface roughness is the primary source of line broadening. The magnetic field-dependent exciton linewidth shows an unexpected behavior. We observe not only just a monotonic increase in linewidth but also a field-dependent decreasing linewidth in thicker quantum wells. These observations are understood by postulating the existence of two correlation lengths for the interface fluctuations, one much smaller than the exciton size and the other one of the order of the exciton size.

U2 - 10.1063/1.2825417

DO - 10.1063/1.2825417

M3 - Journal article

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 25

M1 - 251108

ER -