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Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Magnetic ratchet effect in bilayer graphene
AU - Kheirabadi, Narjes
AU - McCann, Edward
AU - Falko, Vladimir
PY - 2016/10/15
Y1 - 2016/10/15
N2 - We consider the orbital effect of an in-plane magnetic field on electrons in bilayer graphene, deriving linear-in-field contributions to the low-energy Hamiltonian arising from the presence of either skew interlayer coupling or interlayer potential asymmetry, the latter being tunable by an external metallic gate. To illustrate the relevance of such terms, we consider the ratchet effect in which a dc current results from the application of an alternating electric field in the presence of an in-plane magnetic field and inversion-symmetry breaking. By comparison with recent experimental observations in monolayer graphene [C. Drexler et al., Nat. Nanotechnol. 8, 104 (2013)], we estimate that the effect in bilayer graphene can be two orders of magnitude greater than that in monolayer graphene, illustrating that the bilayer is an ideal material for the realization of optoelectronic effects that rely on inversion-symmetry breaking.
AB - We consider the orbital effect of an in-plane magnetic field on electrons in bilayer graphene, deriving linear-in-field contributions to the low-energy Hamiltonian arising from the presence of either skew interlayer coupling or interlayer potential asymmetry, the latter being tunable by an external metallic gate. To illustrate the relevance of such terms, we consider the ratchet effect in which a dc current results from the application of an alternating electric field in the presence of an in-plane magnetic field and inversion-symmetry breaking. By comparison with recent experimental observations in monolayer graphene [C. Drexler et al., Nat. Nanotechnol. 8, 104 (2013)], we estimate that the effect in bilayer graphene can be two orders of magnitude greater than that in monolayer graphene, illustrating that the bilayer is an ideal material for the realization of optoelectronic effects that rely on inversion-symmetry breaking.
U2 - 10.1103/PhysRevB.94.165404
DO - 10.1103/PhysRevB.94.165404
M3 - Journal article
VL - 94
JO - Physical review B
JF - Physical review B
SN - 1098-0121
IS - 16
M1 - 165404
ER -