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Magnetic ratchet effect in bilayer graphene

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Magnetic ratchet effect in bilayer graphene. / Kheirabadi, Narjes; McCann, Edward; Falko, Vladimir.

In: Physical review B, Vol. 94, No. 16, 165404, 15.10.2016.

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@article{20df9d80a0c949a5b20a5fb50861cdd9,
title = "Magnetic ratchet effect in bilayer graphene",
abstract = "We consider the orbital effect of an in-plane magnetic field on electrons in bilayer graphene, deriving linear-in-field contributions to the low-energy Hamiltonian arising from the presence of either skew interlayer coupling or interlayer potential asymmetry, the latter being tunable by an external metallic gate. To illustrate the relevance of such terms, we consider the ratchet effect in which a dc current results from the application of an alternating electric field in the presence of an in-plane magnetic field and inversion-symmetry breaking. By comparison with recent experimental observations in monolayer graphene [C. Drexler et al., Nat. Nanotechnol. 8, 104 (2013)], we estimate that the effect in bilayer graphene can be two orders of magnitude greater than that in monolayer graphene, illustrating that the bilayer is an ideal material for the realization of optoelectronic effects that rely on inversion-symmetry breaking.",
author = "Narjes Kheirabadi and Edward McCann and Vladimir Falko",
year = "2016",
month = "10",
day = "15",
doi = "10.1103/PhysRevB.94.165404",
language = "English",
volume = "94",
journal = "Physical Review B: Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "16",

}

RIS

TY - JOUR

T1 - Magnetic ratchet effect in bilayer graphene

AU - Kheirabadi, Narjes

AU - McCann, Edward

AU - Falko, Vladimir

PY - 2016/10/15

Y1 - 2016/10/15

N2 - We consider the orbital effect of an in-plane magnetic field on electrons in bilayer graphene, deriving linear-in-field contributions to the low-energy Hamiltonian arising from the presence of either skew interlayer coupling or interlayer potential asymmetry, the latter being tunable by an external metallic gate. To illustrate the relevance of such terms, we consider the ratchet effect in which a dc current results from the application of an alternating electric field in the presence of an in-plane magnetic field and inversion-symmetry breaking. By comparison with recent experimental observations in monolayer graphene [C. Drexler et al., Nat. Nanotechnol. 8, 104 (2013)], we estimate that the effect in bilayer graphene can be two orders of magnitude greater than that in monolayer graphene, illustrating that the bilayer is an ideal material for the realization of optoelectronic effects that rely on inversion-symmetry breaking.

AB - We consider the orbital effect of an in-plane magnetic field on electrons in bilayer graphene, deriving linear-in-field contributions to the low-energy Hamiltonian arising from the presence of either skew interlayer coupling or interlayer potential asymmetry, the latter being tunable by an external metallic gate. To illustrate the relevance of such terms, we consider the ratchet effect in which a dc current results from the application of an alternating electric field in the presence of an in-plane magnetic field and inversion-symmetry breaking. By comparison with recent experimental observations in monolayer graphene [C. Drexler et al., Nat. Nanotechnol. 8, 104 (2013)], we estimate that the effect in bilayer graphene can be two orders of magnitude greater than that in monolayer graphene, illustrating that the bilayer is an ideal material for the realization of optoelectronic effects that rely on inversion-symmetry breaking.

U2 - 10.1103/PhysRevB.94.165404

DO - 10.1103/PhysRevB.94.165404

M3 - Journal article

VL - 94

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

SN - 1098-0121

IS - 16

M1 - 165404

ER -