Home > Research > Publications & Outputs > Magneto-photoluminescence of stacked self-assem...
View graph of relations

Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published

Standard

Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots. / Maes, J ; Hayne, M ; Henini, M et al.
In: Physica B: Condensed Matter, Vol. 346-347, 30.04.2004, p. 428-431.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Maes, J, Hayne, M, Henini, M, Pulizzi, F, Patane, A, Eaves, L & Moshchalkov, VV 2004, 'Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots', Physica B: Condensed Matter, vol. 346-347, pp. 428-431. https://doi.org/10.1016/j.physb.2004.01.120

APA

Maes, J., Hayne, M., Henini, M., Pulizzi, F., Patane, A., Eaves, L., & Moshchalkov, V. V. (2004). Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots. Physica B: Condensed Matter, 346-347, 428-431. https://doi.org/10.1016/j.physb.2004.01.120

Vancouver

Maes J, Hayne M, Henini M, Pulizzi F, Patane A, Eaves L et al. Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots. Physica B: Condensed Matter. 2004 Apr 30;346-347:428-431. doi: 10.1016/j.physb.2004.01.120

Author

Maes, J ; Hayne, M ; Henini, M et al. / Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots. In: Physica B: Condensed Matter. 2004 ; Vol. 346-347. pp. 428-431.

Bibtex

@article{f06767bbf8d748f79ce28c28e126ad5a,
title = "Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots",
abstract = "We studied ten-fold stacked layers of self-assembled InAs/GaAs quantum dots by photoluminescence in pulsed magnetic fields. When the interlayer distance is reduced from 9.8 to 5.5 nm, a doubling of the diamagnetic shift for a magnetic field perpendicular to the [0 0 1] direction reveals the onset of electron coupling between the dots in the stack. On reducing the interlayer distance to 3.1 nm, a lower exciton effective mass is seen in addition to the coupling. For such a close stacking, the strain field in and around the dot is completely different from that of a single-layered structure. In particular, the strain inside the InAs dots in the stack is partially relaxed, causing the observed effect. (C) 2004 Elsevier B.V. All rights reserved.",
keywords = "self-assembled quantum dots, InAs, pulsed magnetic fields, GROWTH, LAYERS",
author = "J Maes and M Hayne and M Henini and F Pulizzi and A Patane and L Eaves and Moshchalkov, {V V}",
year = "2004",
month = apr,
day = "30",
doi = "10.1016/j.physb.2004.01.120",
language = "English",
volume = "346-347",
pages = "428--431",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "ELSEVIER SCIENCE BV",

}

RIS

TY - JOUR

T1 - Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots

AU - Maes, J

AU - Hayne, M

AU - Henini, M

AU - Pulizzi, F

AU - Patane, A

AU - Eaves, L

AU - Moshchalkov, V V

PY - 2004/4/30

Y1 - 2004/4/30

N2 - We studied ten-fold stacked layers of self-assembled InAs/GaAs quantum dots by photoluminescence in pulsed magnetic fields. When the interlayer distance is reduced from 9.8 to 5.5 nm, a doubling of the diamagnetic shift for a magnetic field perpendicular to the [0 0 1] direction reveals the onset of electron coupling between the dots in the stack. On reducing the interlayer distance to 3.1 nm, a lower exciton effective mass is seen in addition to the coupling. For such a close stacking, the strain field in and around the dot is completely different from that of a single-layered structure. In particular, the strain inside the InAs dots in the stack is partially relaxed, causing the observed effect. (C) 2004 Elsevier B.V. All rights reserved.

AB - We studied ten-fold stacked layers of self-assembled InAs/GaAs quantum dots by photoluminescence in pulsed magnetic fields. When the interlayer distance is reduced from 9.8 to 5.5 nm, a doubling of the diamagnetic shift for a magnetic field perpendicular to the [0 0 1] direction reveals the onset of electron coupling between the dots in the stack. On reducing the interlayer distance to 3.1 nm, a lower exciton effective mass is seen in addition to the coupling. For such a close stacking, the strain field in and around the dot is completely different from that of a single-layered structure. In particular, the strain inside the InAs dots in the stack is partially relaxed, causing the observed effect. (C) 2004 Elsevier B.V. All rights reserved.

KW - self-assembled quantum dots

KW - InAs

KW - pulsed magnetic fields

KW - GROWTH

KW - LAYERS

U2 - 10.1016/j.physb.2004.01.120

DO - 10.1016/j.physb.2004.01.120

M3 - Journal article

VL - 346-347

SP - 428

EP - 431

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -