Research output: Contribution to Journal/Magazine › Journal article › peer-review
<mark>Journal publication date</mark> | 03/2004 |
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<mark>Journal</mark> | Physica E: Low-dimensional Systems and Nanostructures |
Issue number | 2-4 |
Volume | 21 |
Number of pages | 4 |
Pages (from-to) | 257-260 |
Publication Status | Published |
<mark>Original language</mark> | English |
We have studied the photoluminescence from GaInP2 grown by molecular beam epitaxy as a function of laser power, magnetic field and temperature. We show that the single luminescence peak observed in such samples arises from weakly bound (type-II) excitons in which the electrons are localised and the holes are free, and that it is the same as the additional low-energy peak typically observed in strongly CuPt-ordered GaInP2 grown by chemical vapour deposition techniques. We propose that the electron is confined in In-rich regions of the sample and the hole is delocalised by coupling between heavy-and light-hole bands. (C) 2003 Elsevier B.V. All rights reserved.