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Measurement of the energy dependence of phase relaxation by single electron tunneling

Research output: Contribution in Book/Report/ProceedingsConference contribution

Published

Publication date2001
Host publicationProceedings of the 25th International Conference on the Physics of Semiconductors : Osaka, Japan, September 17-22, 2000
EditorsN Miura, T Ando
Place of publicationBerlin
PublisherSpringer Verlag
Pages1337-1338
Number of pages2
ISBN (Print)3-540-41778-8
Original languageEnglish

Conference

Conference25th International Conference on the Physics of Semiconductors (ICPS25)
CityOSAKA
Period17/09/0022/09/00

Conference

Conference25th International Conference on the Physics of Semiconductors (ICPS25)
CityOSAKA
Period17/09/0022/09/00

Abstract

Single electron tunneling through a single impurity level is used to probe the fluctuations of the local density of states in the emitter. The energy dependence of quasiparticle relaxation in the emitter can be extracted from the damping of the fluctuations of the local density of states (LDOS). At larger magnetic fields Zeeman splitting is observed.