Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
| Article number | 155320 |
|---|---|
| <mark>Journal publication date</mark> | 19/10/2009 |
| <mark>Journal</mark> | Physical review B |
| Issue number | 15 |
| Volume | 80 |
| Number of pages | 5 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
We have systematically measured the shot noise in a single-electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.