Final published version, 1.37 MB, PDF document
Available under license: CC BY: Creative Commons Attribution 4.0 International License
Final published version
Licence: CC BY: Creative Commons Attribution 4.0 International License
Research output: Contribution to conference - Without ISBN/ISSN › Abstract › peer-review
Research output: Contribution to conference - Without ISBN/ISSN › Abstract › peer-review
}
TY - CONF
T1 - Micro and Nanoscale Mapping of Electrical Characterization of Graphene and Semiconductor Heterostructures.
AU - Alsharif, Ghazi
AU - Robinson, Benjamin James
AU - Kolosov, Oleg Victor
PY - 2016/7/24
Y1 - 2016/7/24
N2 - Graphene and 2D materials have proven to be promising materials to be used to fabricate heterostructures, and also promising candidate to be used in combination with optoelectronic devices, due to their unique electronic properties1. Here, the electrical properties of heterostructures, as well as the specific contacts area onto graphene are investigated by using properly designed test patterns. We firstly use PlayStation micro-probing (PSM) for macroscopic characterisations. Secondly, High- spatial resolution current mapping needed to provide an insight into the nanoscale mechanisms of electrical transport. We use scanning probe microscopy (SPM) as well as scanning gate microscopy (SGM), with a conductive diamond tip directly access to nano-resolution structures both topographically and electrically, with illumination and dark regimes. Additionally, we plan to report measurement in 2D materials heterostructures and their photoresponse on this regimes.
AB - Graphene and 2D materials have proven to be promising materials to be used to fabricate heterostructures, and also promising candidate to be used in combination with optoelectronic devices, due to their unique electronic properties1. Here, the electrical properties of heterostructures, as well as the specific contacts area onto graphene are investigated by using properly designed test patterns. We firstly use PlayStation micro-probing (PSM) for macroscopic characterisations. Secondly, High- spatial resolution current mapping needed to provide an insight into the nanoscale mechanisms of electrical transport. We use scanning probe microscopy (SPM) as well as scanning gate microscopy (SGM), with a conductive diamond tip directly access to nano-resolution structures both topographically and electrically, with illumination and dark regimes. Additionally, we plan to report measurement in 2D materials heterostructures and their photoresponse on this regimes.
KW - Graphene
KW - 2D materials
KW - SPM
KW - PSM
M3 - Abstract
SP - 52
T2 - ANM2016: 7th International Conference on Advanced Nanomaterials
Y2 - 25 July 2016 through 27 July 2016
ER -