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Micro and Nanoscale Mapping of Electrical Characterization of Graphene and Semiconductor Heterostructures.

Research output: Contribution to conference - Without ISBN/ISSN Abstract

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Micro and Nanoscale Mapping of Electrical Characterization of Graphene and Semiconductor Heterostructures. / Alsharif, Ghazi; Robinson, Benjamin James; Kolosov, Oleg Victor.

2016. 52 Abstract from ANM2016: 7th International Conference on Advanced Nanomaterials, Aveiro, Portugal.

Research output: Contribution to conference - Without ISBN/ISSN Abstract

Harvard

Alsharif, G, Robinson, BJ & Kolosov, OV 2016, 'Micro and Nanoscale Mapping of Electrical Characterization of Graphene and Semiconductor Heterostructures.', ANM2016: 7th International Conference on Advanced Nanomaterials, Aveiro, Portugal, 25/07/16 - 27/07/16 pp. 52.

APA

Alsharif, G., Robinson, B. J., & Kolosov, O. V. (2016). Micro and Nanoscale Mapping of Electrical Characterization of Graphene and Semiconductor Heterostructures.. 52. Abstract from ANM2016: 7th International Conference on Advanced Nanomaterials, Aveiro, Portugal.

Vancouver

Alsharif G, Robinson BJ, Kolosov OV. Micro and Nanoscale Mapping of Electrical Characterization of Graphene and Semiconductor Heterostructures.. 2016. Abstract from ANM2016: 7th International Conference on Advanced Nanomaterials, Aveiro, Portugal.

Author

Bibtex

@conference{9dffd10e089a48c6aebb93f1133d9afd,
title = "Micro and Nanoscale Mapping of Electrical Characterization of Graphene and Semiconductor Heterostructures.",
abstract = "Graphene and 2D materials have proven to be promising materials to be used to fabricate heterostructures, and also promising candidate to be used in combination with optoelectronic devices, due to their unique electronic properties1. Here, the electrical properties of heterostructures, as well as the specific contacts area onto graphene are investigated by using properly designed test patterns. We firstly use PlayStation micro-probing (PSM) for macroscopic characterisations. Secondly, High- spatial resolution current mapping needed to provide an insight into the nanoscale mechanisms of electrical transport. We use scanning probe microscopy (SPM) as well as scanning gate microscopy (SGM), with a conductive diamond tip directly access to nano-resolution structures both topographically and electrically, with illumination and dark regimes. Additionally, we plan to report measurement in 2D materials heterostructures and their photoresponse on this regimes.",
keywords = "Graphene, 2D materials, SPM, PSM",
author = "Ghazi Alsharif and Robinson, {Benjamin James} and Kolosov, {Oleg Victor}",
year = "2016",
month = jul
day = "24",
language = "English",
pages = "52",
note = "ANM2016: 7th International Conference on Advanced Nanomaterials, ANM2016 ; Conference date: 25-07-2016 Through 27-07-2016",
url = "http://www.rsc.org/events/detail/22757/anm2016-7th-international-conference-on-advanced-nanomaterials",

}

RIS

TY - CONF

T1 - Micro and Nanoscale Mapping of Electrical Characterization of Graphene and Semiconductor Heterostructures.

AU - Alsharif, Ghazi

AU - Robinson, Benjamin James

AU - Kolosov, Oleg Victor

PY - 2016/7/24

Y1 - 2016/7/24

N2 - Graphene and 2D materials have proven to be promising materials to be used to fabricate heterostructures, and also promising candidate to be used in combination with optoelectronic devices, due to their unique electronic properties1. Here, the electrical properties of heterostructures, as well as the specific contacts area onto graphene are investigated by using properly designed test patterns. We firstly use PlayStation micro-probing (PSM) for macroscopic characterisations. Secondly, High- spatial resolution current mapping needed to provide an insight into the nanoscale mechanisms of electrical transport. We use scanning probe microscopy (SPM) as well as scanning gate microscopy (SGM), with a conductive diamond tip directly access to nano-resolution structures both topographically and electrically, with illumination and dark regimes. Additionally, we plan to report measurement in 2D materials heterostructures and their photoresponse on this regimes.

AB - Graphene and 2D materials have proven to be promising materials to be used to fabricate heterostructures, and also promising candidate to be used in combination with optoelectronic devices, due to their unique electronic properties1. Here, the electrical properties of heterostructures, as well as the specific contacts area onto graphene are investigated by using properly designed test patterns. We firstly use PlayStation micro-probing (PSM) for macroscopic characterisations. Secondly, High- spatial resolution current mapping needed to provide an insight into the nanoscale mechanisms of electrical transport. We use scanning probe microscopy (SPM) as well as scanning gate microscopy (SGM), with a conductive diamond tip directly access to nano-resolution structures both topographically and electrically, with illumination and dark regimes. Additionally, we plan to report measurement in 2D materials heterostructures and their photoresponse on this regimes.

KW - Graphene

KW - 2D materials

KW - SPM

KW - PSM

M3 - Abstract

SP - 52

T2 - ANM2016: 7th International Conference on Advanced Nanomaterials

Y2 - 25 July 2016 through 27 July 2016

ER -