Standard
Mid-infrared diode lasers for free space optical communications. /
Yin, M.; Krier, A.; Krier, S. et al.
Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components Architectures for Microwave Systems and Displays. ed. / LJ Sjoqvist; RA Wilson; TJ Merlet. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, 2006. p. U101-U106.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Harvard
Yin, M, Krier, A, Krier, S, Jones, R & Carrington, P 2006,
Mid-infrared diode lasers for free space optical communications. in LJ Sjoqvist, RA Wilson & TJ Merlet (eds),
Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components Architectures for Microwave Systems and Displays. SPIE-INT SOC OPTICAL ENGINEERING, BELLINGHAM, pp. U101-U106, Conference on Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Component/Architectures for Microwave Systems and Displays, Stockholm,
12/09/06.
https://doi.org/10.1117/12.688238
APA
Yin, M., Krier, A., Krier, S., Jones, R., & Carrington, P. (2006).
Mid-infrared diode lasers for free space optical communications. In LJ. Sjoqvist, RA. Wilson, & TJ. Merlet (Eds.),
Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components Architectures for Microwave Systems and Displays (pp. U101-U106). SPIE-INT SOC OPTICAL ENGINEERING.
https://doi.org/10.1117/12.688238
Vancouver
Author
Bibtex
@inproceedings{d4b4fd55fa7848acaffc9e97e7f1744c,
title = "Mid-infrared diode lasers for free space optical communications",
abstract = "In this work we report on a specially optimized type-I InAsSb/InAsSbP double heterostructure (DH) ridge laser grown by liquid phase epitaxy (LPE). To remove residual impurities and reduce Shockley-Read recombination, the active region was purified using a Gd gettering technique. In addition free carrier absorption loss was minimized by the introduction of two undoped quaternary layers with the same composition of the cladding layers either side of the active region. The inserted layers also helped alleviate inter-diffusion of unwanted dopants towards the active region during or after growth and reduced current leakage of the device. The diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 mu m at 170 K with a threshold current density as low as 118 A/cm(2) at 85 K. Compared to the conventional 3-layer DH laser, the optimized 5-layer structure with reduced optical loss can raise the maximum lasing temperature by 95K to similar to 210K.",
author = "M. Yin and A. Krier and S. Krier and Robert Jones and P. Carrington",
year = "2006",
doi = "10.1117/12.688238",
language = "English",
isbn = "978-0-8194-6497-2",
pages = "U101--U106",
editor = "LJ Sjoqvist and RA Wilson and TJ Merlet",
booktitle = "Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components Architectures for Microwave Systems and Displays",
publisher = "SPIE-INT SOC OPTICAL ENGINEERING",
note = "Conference on Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Component/Architectures for Microwave Systems and Displays ; Conference date: 12-09-2006 Through 13-09-2006",
}
RIS
TY - GEN
T1 - Mid-infrared diode lasers for free space optical communications
AU - Yin, M.
AU - Krier, A.
AU - Krier, S.
AU - Jones, Robert
AU - Carrington, P.
PY - 2006
Y1 - 2006
N2 - In this work we report on a specially optimized type-I InAsSb/InAsSbP double heterostructure (DH) ridge laser grown by liquid phase epitaxy (LPE). To remove residual impurities and reduce Shockley-Read recombination, the active region was purified using a Gd gettering technique. In addition free carrier absorption loss was minimized by the introduction of two undoped quaternary layers with the same composition of the cladding layers either side of the active region. The inserted layers also helped alleviate inter-diffusion of unwanted dopants towards the active region during or after growth and reduced current leakage of the device. The diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 mu m at 170 K with a threshold current density as low as 118 A/cm(2) at 85 K. Compared to the conventional 3-layer DH laser, the optimized 5-layer structure with reduced optical loss can raise the maximum lasing temperature by 95K to similar to 210K.
AB - In this work we report on a specially optimized type-I InAsSb/InAsSbP double heterostructure (DH) ridge laser grown by liquid phase epitaxy (LPE). To remove residual impurities and reduce Shockley-Read recombination, the active region was purified using a Gd gettering technique. In addition free carrier absorption loss was minimized by the introduction of two undoped quaternary layers with the same composition of the cladding layers either side of the active region. The inserted layers also helped alleviate inter-diffusion of unwanted dopants towards the active region during or after growth and reduced current leakage of the device. The diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 mu m at 170 K with a threshold current density as low as 118 A/cm(2) at 85 K. Compared to the conventional 3-layer DH laser, the optimized 5-layer structure with reduced optical loss can raise the maximum lasing temperature by 95K to similar to 210K.
U2 - 10.1117/12.688238
DO - 10.1117/12.688238
M3 - Conference contribution/Paper
SN - 978-0-8194-6497-2
SP - U101-U106
BT - Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components Architectures for Microwave Systems and Displays
A2 - Sjoqvist, LJ
A2 - Wilson, RA
A2 - Merlet, TJ
PB - SPIE-INT SOC OPTICAL ENGINEERING
CY - BELLINGHAM
T2 - Conference on Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Component/Architectures for Microwave Systems and Displays
Y2 - 12 September 2006 through 13 September 2006
ER -
