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Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .

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Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. . / Krier, A.; Stone, M.; Zhuang, Q. D. et al.
In: Applied Physics Letters, Vol. 89, No. 9, 28.08.2006, p. 091110.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Krier, A, Stone, M, Zhuang, QD, Liu, PW, Tsai, G & Lin, HH 2006, 'Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .', Applied Physics Letters, vol. 89, no. 9, pp. 091110. https://doi.org/10.1063/1.2339036

APA

Krier, A., Stone, M., Zhuang, Q. D., Liu, P. W., Tsai, G., & Lin, H. H. (2006). Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. . Applied Physics Letters, 89(9), 091110. https://doi.org/10.1063/1.2339036

Vancouver

Krier A, Stone M, Zhuang QD, Liu PW, Tsai G, Lin HH. Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. . Applied Physics Letters. 2006 Aug 28;89(9):091110. doi: 10.1063/1.2339036

Author

Krier, A. ; Stone, M. ; Zhuang, Q. D. et al. / Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. . In: Applied Physics Letters. 2006 ; Vol. 89, No. 9. pp. 091110.

Bibtex

@article{14bbc69656164eec8b5f5abecbdef464,
title = "Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .",
abstract = "Room-temperature electroluminescence is reported from InAsSb multiple-quantum-well light-emitting diodes. The diodes exhibited emission in the mid-infrared peaking near 4 µm. The spectral dependence on injection current at 4 K was investigated and two transitions were identified, centered at 4.05 and 3.50 µm, which are associated with the eigenstates of the confined holes inside the quantum well. The use of an Sb predeposition and As flux surface exposure during epitaxial growth was observed to have a major effect on the electroluminescence output.",
author = "A. Krier and M. Stone and Zhuang, {Q. D.} and Liu, {P. W.} and G. Tsai and Lin, {H. H.}",
note = "Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 89 (9), 2006 and may be found at http://link.aip.org/link/?APPLAB/89/091110/1",
year = "2006",
month = aug,
day = "28",
doi = "10.1063/1.2339036",
language = "English",
volume = "89",
pages = "091110",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "9",

}

RIS

TY - JOUR

T1 - Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .

AU - Krier, A.

AU - Stone, M.

AU - Zhuang, Q. D.

AU - Liu, P. W.

AU - Tsai, G.

AU - Lin, H. H.

N1 - Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 89 (9), 2006 and may be found at http://link.aip.org/link/?APPLAB/89/091110/1

PY - 2006/8/28

Y1 - 2006/8/28

N2 - Room-temperature electroluminescence is reported from InAsSb multiple-quantum-well light-emitting diodes. The diodes exhibited emission in the mid-infrared peaking near 4 µm. The spectral dependence on injection current at 4 K was investigated and two transitions were identified, centered at 4.05 and 3.50 µm, which are associated with the eigenstates of the confined holes inside the quantum well. The use of an Sb predeposition and As flux surface exposure during epitaxial growth was observed to have a major effect on the electroluminescence output.

AB - Room-temperature electroluminescence is reported from InAsSb multiple-quantum-well light-emitting diodes. The diodes exhibited emission in the mid-infrared peaking near 4 µm. The spectral dependence on injection current at 4 K was investigated and two transitions were identified, centered at 4.05 and 3.50 µm, which are associated with the eigenstates of the confined holes inside the quantum well. The use of an Sb predeposition and As flux surface exposure during epitaxial growth was observed to have a major effect on the electroluminescence output.

U2 - 10.1063/1.2339036

DO - 10.1063/1.2339036

M3 - Journal article

VL - 89

SP - 091110

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 9

ER -