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Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. .

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Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. . / Krier, A.; Huang, X. L.
In: Physica E: Low-dimensional Systems and Nanostructures, Vol. 15, No. 3, 11.2002, p. 159-163.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Krier A, Huang XL. Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. . Physica E: Low-dimensional Systems and Nanostructures. 2002 Nov;15(3):159-163. doi: 10.1016/S1386-9477(02)00460-5

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Krier, A. ; Huang, X. L. / Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. . In: Physica E: Low-dimensional Systems and Nanostructures. 2002 ; Vol. 15, No. 3. pp. 159-163.

Bibtex

@article{ff3290419470456e827771b8247b49c1,
title = "Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. .",
abstract = "Mid-infrared electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot (QD) light emitting diodes. The QDs were grown from the liquid phase at 590 degreesC on an InAS(100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4 K and 250 mA injection current, a broad emission band was observed, centred at similar to 4 mum, associated with transitions involving confined holes inside the InAsSb quantum dot. The QD emission band exhibits a blue shift with increasing injection current and the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The QD electroluminescence was observed to persist up to room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.",
keywords = "Mid-infrared, Quantum dots, Electroluminescence",
author = "A. Krier and Huang, {X. L.}",
year = "2002",
month = nov,
doi = "10.1016/S1386-9477(02)00460-5",
language = "English",
volume = "15",
pages = "159--163",
journal = "Physica E: Low-dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "3",

}

RIS

TY - JOUR

T1 - Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. .

AU - Krier, A.

AU - Huang, X. L.

PY - 2002/11

Y1 - 2002/11

N2 - Mid-infrared electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot (QD) light emitting diodes. The QDs were grown from the liquid phase at 590 degreesC on an InAS(100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4 K and 250 mA injection current, a broad emission band was observed, centred at similar to 4 mum, associated with transitions involving confined holes inside the InAsSb quantum dot. The QD emission band exhibits a blue shift with increasing injection current and the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The QD electroluminescence was observed to persist up to room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

AB - Mid-infrared electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot (QD) light emitting diodes. The QDs were grown from the liquid phase at 590 degreesC on an InAS(100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4 K and 250 mA injection current, a broad emission band was observed, centred at similar to 4 mum, associated with transitions involving confined holes inside the InAsSb quantum dot. The QD emission band exhibits a blue shift with increasing injection current and the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The QD electroluminescence was observed to persist up to room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

KW - Mid-infrared

KW - Quantum dots

KW - Electroluminescence

U2 - 10.1016/S1386-9477(02)00460-5

DO - 10.1016/S1386-9477(02)00460-5

M3 - Journal article

VL - 15

SP - 159

EP - 163

JO - Physica E: Low-dimensional Systems and Nanostructures

JF - Physica E: Low-dimensional Systems and Nanostructures

SN - 1386-9477

IS - 3

ER -