Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
| Publication date | 1/01/2009 |
|---|---|
| Host publication | International Quantum Electronics Conference, IQEC 2009 |
| Publisher | Optical Society of America (OSA) |
| ISBN (print) | 9781557528698 |
| <mark>Original language</mark> | English |
| Event | International Quantum Electronics Conference, IQEC 2009 - Baltimore, MD, United States Duration: 31/05/2009 → 5/06/2009 |
| Conference | International Quantum Electronics Conference, IQEC 2009 |
|---|---|
| Country/Territory | United States |
| City | Baltimore, MD |
| Period | 31/05/09 → 5/06/09 |
| Conference | International Quantum Electronics Conference, IQEC 2009 |
|---|---|
| Country/Territory | United States |
| City | Baltimore, MD |
| Period | 31/05/09 → 5/06/09 |
Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ~3.3μm at 200K with 1.1% strain in the QW.