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Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

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Publication date1/01/2009
Host publicationInternational Quantum Electronics Conference, IQEC 2009
PublisherOptical Society of America (OSA)
ISBN (Print)9781557528698
Original languageEnglish
EventInternational Quantum Electronics Conference, IQEC 2009 - Baltimore, MD, United States
Duration: 31/05/20095/06/2009

Conference

ConferenceInternational Quantum Electronics Conference, IQEC 2009
CountryUnited States
CityBaltimore, MD
Period31/05/095/06/09

Conference

ConferenceInternational Quantum Electronics Conference, IQEC 2009
CountryUnited States
CityBaltimore, MD
Period31/05/095/06/09

Abstract

Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ~3.3μm at 200K with 1.1% strain in the QW.