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Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

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Publication date16/11/2009
Host publication2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Original languageEnglish
Event2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States
Duration: 2/06/20094/06/2009

Conference

Conference2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
CountryUnited States
CityBaltimore, MD
Period2/06/094/06/09

Conference

Conference2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
CountryUnited States
CityBaltimore, MD
Period2/06/094/06/09

Abstract

Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ∼3.3μm at 200K with 1.1% strain in the QW.