Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
| Publication date | 16/11/2009 |
|---|---|
| Host publication | 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 |
| <mark>Original language</mark> | English |
| Event | 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States Duration: 2/06/2009 → 4/06/2009 |
| Conference | 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 |
|---|---|
| Country/Territory | United States |
| City | Baltimore, MD |
| Period | 2/06/09 → 4/06/09 |
| Conference | 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 |
|---|---|
| Country/Territory | United States |
| City | Baltimore, MD |
| Period | 2/06/09 → 4/06/09 |
Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ∼3.3μm at 200K with 1.1% strain in the QW.