Standard
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. / Nash, G. R.; Przeslak, S. J.B.; Smith, S. J. et al.
2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009. 5226114.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Harvard
Nash, GR, Przeslak, SJB, Smith, SJ, De Valicourt, G, Andreev, AD
, Carrington, PJ, Yin, M, Krier, A, Coomber, SD, Buckle, L, Emeny, MT & Ashley, T 2009,
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. in
2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009., 5226114, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, Baltimore, MD, United States,
2/06/09.
APA
Nash, G. R., Przeslak, S. J. B., Smith, S. J., De Valicourt, G., Andreev, A. D.
, Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T., & Ashley, T. (2009).
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In
2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 Article 5226114
Vancouver
Author
Bibtex
@inproceedings{8e224e2cbe064aa8a6b6c25ddce31023,
title = "Mid-infrared GaInSb/AlGaInSb quantum well laser diodes",
abstract = "Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ∼3.3μm at 200K with 1.1% strain in the QW.",
author = "Nash, {G. R.} and Przeslak, {S. J.B.} and Smith, {S. J.} and {De Valicourt}, G. and Andreev, {A. D.} and Carrington, {P. J.} and M. Yin and A. Krier and Coomber, {S. D.} and L. Buckle and Emeny, {M. T.} and T. Ashley",
year = "2009",
month = nov,
day = "16",
language = "English",
isbn = "9781557528698",
booktitle = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009",
note = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 ; Conference date: 02-06-2009 Through 04-06-2009",
}
RIS
TY - GEN
T1 - Mid-infrared GaInSb/AlGaInSb quantum well laser diodes
AU - Nash, G. R.
AU - Przeslak, S. J.B.
AU - Smith, S. J.
AU - De Valicourt, G.
AU - Andreev, A. D.
AU - Carrington, P. J.
AU - Yin, M.
AU - Krier, A.
AU - Coomber, S. D.
AU - Buckle, L.
AU - Emeny, M. T.
AU - Ashley, T.
PY - 2009/11/16
Y1 - 2009/11/16
N2 - Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ∼3.3μm at 200K with 1.1% strain in the QW.
AB - Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ∼3.3μm at 200K with 1.1% strain in the QW.
M3 - Conference contribution/Paper
AN - SCOPUS:71049176154
SN - 9781557528698
BT - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
T2 - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Y2 - 2 June 2009 through 4 June 2009
ER -
