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Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

Research output: Contribution in Book/Report/ProceedingsPaper

Published

Publication date2009
Host publicationLasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Place of publicationNew York
PublisherIEEE
Pages2813-2814
Number of pages2
ISBN (Print)978-1-4244-5184-5
Original languageEnglish

Conference

ConferenceConference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009)
CityBaltimore
Period2/06/094/06/09

Conference

ConferenceConference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009)
CityBaltimore
Period2/06/094/06/09

Abstract

Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at similar to 3.3 mu m at 200K with 1.1% strain in the QW. (C)2009 Optical Society of America