Standard
Harvard
Nash, GR, Smith, SJ, Coomber, SD, Przeslak, S, Andreev, A
, Carrington, P, Yin, M, Krier, A, Buckle, L, Emeny, MT & Ashley, T 2007, '
Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. .',
Applied Physics Letters, vol. 91, no. 13, pp. 131118.
https://doi.org/10.1063/1.2793821APA
Nash, G. R., Smith, S. J., Coomber, S. D., Przeslak, S., Andreev, A.
, Carrington, P., Yin, M., Krier, A., Buckle, L., Emeny, M. T., & Ashley, T. (2007).
Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. . Applied Physics Letters,
91(13), 131118.
https://doi.org/10.1063/1.2793821Vancouver
Author
Bibtex
@article{ce6cdc85946446268b6b2f7f9638620b,
title = "Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. .",
abstract = "The realization of midinfrared GaInSb/AlGaInSb type I quantum well diode lasers grown on GaAs is reported. Lasing was observed up to 95 K, at an emission wavelength of ~3.5 µm, threshold current density of 115 A/cm2, and with a characteristic temperature T0~51 K.",
author = "Nash, {G. R.} and Smith, {S. J.} and Coomber, {S. D.} and S. Przeslak and A. Andreev and P. Carrington and M. Yin and A. Krier and L. Buckle and Emeny, {M. T.} and T. Ashley",
note = "Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 91 (13), 2007 and may be found at http://link.aip.org/link/?APPLAB/91/131118/1",
year = "2007",
month = sep,
day = "24",
doi = "10.1063/1.2793821",
language = "English",
volume = "91",
pages = "131118",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "13",
}
RIS
TY - JOUR
T1 - Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. .
AU - Nash, G. R.
AU - Smith, S. J.
AU - Coomber, S. D.
AU - Przeslak, S.
AU - Andreev, A.
AU - Carrington, P.
AU - Yin, M.
AU - Krier, A.
AU - Buckle, L.
AU - Emeny, M. T.
AU - Ashley, T.
N1 - Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 91 (13), 2007 and may be found at http://link.aip.org/link/?APPLAB/91/131118/1
PY - 2007/9/24
Y1 - 2007/9/24
N2 - The realization of midinfrared GaInSb/AlGaInSb type I quantum well diode lasers grown on GaAs is reported. Lasing was observed up to 95 K, at an emission wavelength of ~3.5 µm, threshold current density of 115 A/cm2, and with a characteristic temperature T0~51 K.
AB - The realization of midinfrared GaInSb/AlGaInSb type I quantum well diode lasers grown on GaAs is reported. Lasing was observed up to 95 K, at an emission wavelength of ~3.5 µm, threshold current density of 115 A/cm2, and with a characteristic temperature T0~51 K.
U2 - 10.1063/1.2793821
DO - 10.1063/1.2793821
M3 - Journal article
VL - 91
SP - 131118
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 1077-3118
IS - 13
ER -
