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    Rights statement: 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License

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Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

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Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays. / Craig, Adam; Marshall, Andrew; Tian, Z.-B. et al.
In: Applied Physics Letters, Vol. 103, 253502, 16.12.2013.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Craig, A, Marshall, A, Tian, Z-B, Krishna, S & Krier, A 2013, 'Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays', Applied Physics Letters, vol. 103, 253502. https://doi.org/10.1063/1.4844615

APA

Craig, A., Marshall, A., Tian, Z-B., Krishna, S., & Krier, A. (2013). Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays. Applied Physics Letters, 103, Article 253502. https://doi.org/10.1063/1.4844615

Vancouver

Craig A, Marshall A, Tian Z-B, Krishna S, Krier A. Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays. Applied Physics Letters. 2013 Dec 16;103:253502. doi: 10.1063/1.4844615

Author

Craig, Adam ; Marshall, Andrew ; Tian, Z.-B. et al. / Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays. In: Applied Physics Letters. 2013 ; Vol. 103.

Bibtex

@article{3d8a48e5b12e47419821e2fa11b8b13e,
title = "Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays",
abstract = "InAs 0.79Sb0.21-based nBn photodetectors were fabricated on a GaAs substrate, using the interfacial misfit array growth mode. Reductions in the dark current density of more than two orders of magnitude at 300 K and more than six orders of magnitude at 200 K were found, in comparison with an InAs 0.87Sb0.13 p-i-n diode. At −0.5 V applied bias, the dark currents were found to be diffusion limited above 150 K. Background limited infrared photodetection and R0A values in excess of 106 Ωcm2 were observed at 150 K. Spectral response measurements revealed a cut-off wavelength of 5.3 μm at 200 K.",
author = "Adam Craig and Andrew Marshall and Z.-B. Tian and S. Krishna and Anthony Krier",
note = " 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License",
year = "2013",
month = dec,
day = "16",
doi = "10.1063/1.4844615",
language = "English",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",

}

RIS

TY - JOUR

T1 - Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

AU - Craig, Adam

AU - Marshall, Andrew

AU - Tian, Z.-B.

AU - Krishna, S.

AU - Krier, Anthony

N1 - 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License

PY - 2013/12/16

Y1 - 2013/12/16

N2 - InAs 0.79Sb0.21-based nBn photodetectors were fabricated on a GaAs substrate, using the interfacial misfit array growth mode. Reductions in the dark current density of more than two orders of magnitude at 300 K and more than six orders of magnitude at 200 K were found, in comparison with an InAs 0.87Sb0.13 p-i-n diode. At −0.5 V applied bias, the dark currents were found to be diffusion limited above 150 K. Background limited infrared photodetection and R0A values in excess of 106 Ωcm2 were observed at 150 K. Spectral response measurements revealed a cut-off wavelength of 5.3 μm at 200 K.

AB - InAs 0.79Sb0.21-based nBn photodetectors were fabricated on a GaAs substrate, using the interfacial misfit array growth mode. Reductions in the dark current density of more than two orders of magnitude at 300 K and more than six orders of magnitude at 200 K were found, in comparison with an InAs 0.87Sb0.13 p-i-n diode. At −0.5 V applied bias, the dark currents were found to be diffusion limited above 150 K. Background limited infrared photodetection and R0A values in excess of 106 Ωcm2 were observed at 150 K. Spectral response measurements revealed a cut-off wavelength of 5.3 μm at 200 K.

U2 - 10.1063/1.4844615

DO - 10.1063/1.4844615

M3 - Journal article

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

M1 - 253502

ER -