Mid-infrared InAsSbP/InAsSb quantum well laser diodes - art. no. 673808 - Research Portal

Physics

Mid-infrared InAsSbP/InAsSb quantum well laser diodes - art. no. 673808

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Published

Standard

Mid-infrared InAsSbP/InAsSb quantum well laser diodes - art. no. 673808. / Yin, Min ; Krier, Anthony.
TECHNOLOGIES FOR OPTICAL COUNTERMEASURES IV. ed. / DH Titterton; MA Richardson. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, 2007. p. 73808-73808.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Yin, M & Krier, A 2007, Mid-infrared InAsSbP/InAsSb quantum well laser diodes - art. no. 673808. in DH Titterton & MA Richardson (eds), TECHNOLOGIES FOR OPTICAL COUNTERMEASURES IV. SPIE-INT SOC OPTICAL ENGINEERING, BELLINGHAM, pp. 73808-73808, Conference on Technologies for Optical Countermeasures IV, Florence, 17/09/07.

APA

Yin, M., & Krier, A. (2007). Mid-infrared InAsSbP/InAsSb quantum well laser diodes - art. no. 673808. In DH. Titterton, & MA. Richardson (Eds.), TECHNOLOGIES FOR OPTICAL COUNTERMEASURES IV (pp. 73808-73808). SPIE-INT SOC OPTICAL ENGINEERING.

Vancouver

Yin M , Krier A. Mid-infrared InAsSbP/InAsSb quantum well laser diodes - art. no. 673808. In Titterton DH, Richardson MA, editors, TECHNOLOGIES FOR OPTICAL COUNTERMEASURES IV. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING. 2007. p. 73808-73808

Author

Yin, Min ; Krier, Anthony. / Mid-infrared InAsSbP/InAsSb quantum well laser diodes - art. no. 673808. TECHNOLOGIES FOR OPTICAL COUNTERMEASURES IV. editor / DH Titterton ; MA Richardson. BELLINGHAM : SPIE-INT SOC OPTICAL ENGINEERING, 2007. pp. 73808-73808

Bibtex

@inproceedings{351bd574df844ea6b7bb84fd2d848fff,

title = "Mid-infrared InAsSbP/InAsSb quantum well laser diodes - art. no. 673808",

abstract = "This paper describes the characteristics of a separate confinement heterostructure laser design based on type-I InAsSbP/InAsSb multiple quantum wells (MQW). An 8x8 band k.p method was used to calculate the band structure. The optical gain of the active region containing InAsSb QW was calculated using a free carrier gain model. Other properties such as behavior of the fundamental optical TE mode and refractive index profile were also determined. These were used for simulation of the resulting device properties and to estimate the threshold modal gain and threshold current density for the InAsSb MQW laser. Suitable InAsSbP cladding layer and waveguide/barrier materials have been determined. The strain, critical thickness, band offset, optical gain, Auger coefficient and threshold current density have been calculated at various Sb contents (x). The lowest current density is found for the composition range between 0.12",

author = "Min Yin and Anthony Krier",

year = "2007",

language = "English",

isbn = "978-0-8194-6896-3",

pages = "73808--73808",

editor = "DH Titterton and MA Richardson",

booktitle = "TECHNOLOGIES FOR OPTICAL COUNTERMEASURES IV",

publisher = "SPIE-INT SOC OPTICAL ENGINEERING",

note = "Conference on Technologies for Optical Countermeasures IV ; Conference date: 17-09-2007 Through 18-09-2007",

}

RIS

TY - GEN

T1 - Mid-infrared InAsSbP/InAsSb quantum well laser diodes - art. no. 673808

AU - Yin, Min

AU - Krier, Anthony

PY - 2007

Y1 - 2007

N2 - This paper describes the characteristics of a separate confinement heterostructure laser design based on type-I InAsSbP/InAsSb multiple quantum wells (MQW). An 8x8 band k.p method was used to calculate the band structure. The optical gain of the active region containing InAsSb QW was calculated using a free carrier gain model. Other properties such as behavior of the fundamental optical TE mode and refractive index profile were also determined. These were used for simulation of the resulting device properties and to estimate the threshold modal gain and threshold current density for the InAsSb MQW laser. Suitable InAsSbP cladding layer and waveguide/barrier materials have been determined. The strain, critical thickness, band offset, optical gain, Auger coefficient and threshold current density have been calculated at various Sb contents (x). The lowest current density is found for the composition range between 0.12

AB - This paper describes the characteristics of a separate confinement heterostructure laser design based on type-I InAsSbP/InAsSb multiple quantum wells (MQW). An 8x8 band k.p method was used to calculate the band structure. The optical gain of the active region containing InAsSb QW was calculated using a free carrier gain model. Other properties such as behavior of the fundamental optical TE mode and refractive index profile were also determined. These were used for simulation of the resulting device properties and to estimate the threshold modal gain and threshold current density for the InAsSb MQW laser. Suitable InAsSbP cladding layer and waveguide/barrier materials have been determined. The strain, critical thickness, band offset, optical gain, Auger coefficient and threshold current density have been calculated at various Sb contents (x). The lowest current density is found for the composition range between 0.12

M3 - Conference contribution/Paper

SN - 978-0-8194-6896-3

SP - 73808

EP - 73808

BT - TECHNOLOGIES FOR OPTICAL COUNTERMEASURES IV

A2 - Titterton, DH

A2 - Richardson, MA

PB - SPIE-INT SOC OPTICAL ENGINEERING

CY - BELLINGHAM

T2 - Conference on Technologies for Optical Countermeasures IV

Y2 - 17 September 2007 through 18 September 2007

ER -

Research