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Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. .

Research output: Contribution to journalJournal article

Published

  • A. Krier
  • V. M. Smirnov
  • P. J. Batty
  • M. Yin
  • K. T. Lai
  • S. Rybchenko
  • S. K. Haywood
  • V. I. Vasil'ev
  • G. S. Gagis
  • V. I. Kuchinskii
Journal publication date20/08/2007
JournalApplied Physics Letters
Journal number8
Volume91
Pages082102
Original languageEnglish

Abstract

Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4 µm. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation.

Bibliographic note

Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 91 (8), 2007 and may be found at http://link.aip.org/link/?APPLAB/91/082102/1