Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4 µm. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation.
Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 91 (8), 2007 and may be found at http://link.aip.org/link/?APPLAB/91/082102/1