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Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. .

Research output: Contribution to journalJournal article


  • A. Krier
  • V. M. Smirnov
  • P. J. Batty
  • M. Yin
  • K. T. Lai
  • S. Rybchenko
  • S. K. Haywood
  • V. I. Vasil'ev
  • G. S. Gagis
  • V. I. Kuchinskii
<mark>Journal publication date</mark>20/08/2007
<mark>Journal</mark>Applied Physics Letters
<mark>Original language</mark>English


Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4 µm. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation.

Bibliographic note

Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 91 (8), 2007 and may be found at http://link.aip.org/link/?APPLAB/91/082102/1