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Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. .

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Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. . / Krier, A.; Huang, X. L.; Hammiche, A.
In: Applied Physics Letters, Vol. 77, No. 23, 04.12.2000, p. 3791-3793.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Krier, A, Huang, XL & Hammiche, A 2000, 'Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. .', Applied Physics Letters, vol. 77, no. 23, pp. 3791-3793. https://doi.org/10.1063/1.1329168

APA

Krier, A., Huang, X. L., & Hammiche, A. (2000). Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. . Applied Physics Letters, 77(23), 3791-3793. https://doi.org/10.1063/1.1329168

Vancouver

Krier A, Huang XL, Hammiche A. Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. . Applied Physics Letters. 2000 Dec 4;77(23):3791-3793. doi: 10.1063/1.1329168

Author

Krier, A. ; Huang, X. L. ; Hammiche, A. / Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. . In: Applied Physics Letters. 2000 ; Vol. 77, No. 23. pp. 3791-3793.

Bibtex

@article{6b6a586f13a54a51a79b4c5ae69e6a7e,
title = "Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. .",
abstract = "Photoluminescence in the 2–5 µm spectral region is reported from InAs1–xSbx quantum dots grown from the liquid phase at 580 °C on an InAs (100) substrate. Atomic force microscopy shows that coalesced quantum dots and then isolated quantum dots are formed with increasing Sb composition (x = 0.2–0.3) and strain. The 4 K photoluminescence of the isolated and coalesced quantum dots was observed to peak in the midinfrared at 289 and 316 meV, (4.29 and 3.92 µm), respectively. These peaks are due to type II transitions and begin to quench at temperatures above 100 K as holes become thermally activated out of the quantum dot confinement potential. {\textcopyright}2000 American Institute of Physics.",
author = "A. Krier and Huang, {X. L.} and A. Hammiche",
note = "Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 77 (23), 2000 and may be found at http://link.aip.org/link/?APPLAB/77/3791/1",
year = "2000",
month = dec,
day = "4",
doi = "10.1063/1.1329168",
language = "English",
volume = "77",
pages = "3791--3793",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "23",

}

RIS

TY - JOUR

T1 - Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. .

AU - Krier, A.

AU - Huang, X. L.

AU - Hammiche, A.

N1 - Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 77 (23), 2000 and may be found at http://link.aip.org/link/?APPLAB/77/3791/1

PY - 2000/12/4

Y1 - 2000/12/4

N2 - Photoluminescence in the 2–5 µm spectral region is reported from InAs1–xSbx quantum dots grown from the liquid phase at 580 °C on an InAs (100) substrate. Atomic force microscopy shows that coalesced quantum dots and then isolated quantum dots are formed with increasing Sb composition (x = 0.2–0.3) and strain. The 4 K photoluminescence of the isolated and coalesced quantum dots was observed to peak in the midinfrared at 289 and 316 meV, (4.29 and 3.92 µm), respectively. These peaks are due to type II transitions and begin to quench at temperatures above 100 K as holes become thermally activated out of the quantum dot confinement potential. ©2000 American Institute of Physics.

AB - Photoluminescence in the 2–5 µm spectral region is reported from InAs1–xSbx quantum dots grown from the liquid phase at 580 °C on an InAs (100) substrate. Atomic force microscopy shows that coalesced quantum dots and then isolated quantum dots are formed with increasing Sb composition (x = 0.2–0.3) and strain. The 4 K photoluminescence of the isolated and coalesced quantum dots was observed to peak in the midinfrared at 289 and 316 meV, (4.29 and 3.92 µm), respectively. These peaks are due to type II transitions and begin to quench at temperatures above 100 K as holes become thermally activated out of the quantum dot confinement potential. ©2000 American Institute of Physics.

U2 - 10.1063/1.1329168

DO - 10.1063/1.1329168

M3 - Journal article

VL - 77

SP - 3791

EP - 3793

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 23

ER -