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Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. .

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Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. . / Cripps, S. A.; Hosea, T. J. C.; Krier, A. et al.
In: Applied Physics Letters, Vol. 92, No. 17, 24.04.2007, p. 172106.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Cripps, SA, Hosea, TJC, Krier, A, Smirnov, V, Batty, PJ, Zhuang, QD, Lin, HH, Liu, PW & Tsai, G 2007, 'Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. .', Applied Physics Letters, vol. 92, no. 17, pp. 172106. https://doi.org/10.1063/1.2728752

APA

Cripps, S. A., Hosea, T. J. C., Krier, A., Smirnov, V., Batty, P. J., Zhuang, Q. D., Lin, H. H., Liu, P. W., & Tsai, G. (2007). Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. . Applied Physics Letters, 92(17), 172106. https://doi.org/10.1063/1.2728752

Vancouver

Cripps SA, Hosea TJC, Krier A, Smirnov V, Batty PJ, Zhuang QD et al. Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. . Applied Physics Letters. 2007 Apr 24;92(17):172106. doi: 10.1063/1.2728752

Author

Cripps, S. A. ; Hosea, T. J. C. ; Krier, A. et al. / Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. . In: Applied Physics Letters. 2007 ; Vol. 92, No. 17. pp. 172106.

Bibtex

@article{769c450530c54e3da6170b093d9f0697,
title = "Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. .",
abstract = "The authors report on midinfrared photoreflectance measurements of the band gap (E0) and spin-orbit splitting energies (0) in InAs-rich InAsSb and GaInAsPSb samples for varying antimony contents 22.5%. The E0 behavior as a function of Sb content is consistent with the literature value bowing parameter of ~670 meV. However, 0 does not exhibit the positive bowing of +1170 meV quoted in the literature: rather, a best fit to their data tentatively suggests a negative bowing of −225 meV. This result is likely to have strong impact due to the importance of the 0 parameter in governing InAsSb-based device performance.",
author = "Cripps, {S. A.} and Hosea, {T. J. C.} and A. Krier and V. Smirnov and Batty, {P. J.} and Zhuang, {Q. D.} and Lin, {H. H.} and Liu, {P. W.} and G. Tsai",
note = "Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 92 (17), 2008 and may be found at http://link.aip.org/link/?APPLAB/90/172106/1.",
year = "2007",
month = apr,
day = "24",
doi = "10.1063/1.2728752",
language = "English",
volume = "92",
pages = "172106",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "17",

}

RIS

TY - JOUR

T1 - Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. .

AU - Cripps, S. A.

AU - Hosea, T. J. C.

AU - Krier, A.

AU - Smirnov, V.

AU - Batty, P. J.

AU - Zhuang, Q. D.

AU - Lin, H. H.

AU - Liu, P. W.

AU - Tsai, G.

N1 - Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 92 (17), 2008 and may be found at http://link.aip.org/link/?APPLAB/90/172106/1.

PY - 2007/4/24

Y1 - 2007/4/24

N2 - The authors report on midinfrared photoreflectance measurements of the band gap (E0) and spin-orbit splitting energies (0) in InAs-rich InAsSb and GaInAsPSb samples for varying antimony contents 22.5%. The E0 behavior as a function of Sb content is consistent with the literature value bowing parameter of ~670 meV. However, 0 does not exhibit the positive bowing of +1170 meV quoted in the literature: rather, a best fit to their data tentatively suggests a negative bowing of −225 meV. This result is likely to have strong impact due to the importance of the 0 parameter in governing InAsSb-based device performance.

AB - The authors report on midinfrared photoreflectance measurements of the band gap (E0) and spin-orbit splitting energies (0) in InAs-rich InAsSb and GaInAsPSb samples for varying antimony contents 22.5%. The E0 behavior as a function of Sb content is consistent with the literature value bowing parameter of ~670 meV. However, 0 does not exhibit the positive bowing of +1170 meV quoted in the literature: rather, a best fit to their data tentatively suggests a negative bowing of −225 meV. This result is likely to have strong impact due to the importance of the 0 parameter in governing InAsSb-based device performance.

U2 - 10.1063/1.2728752

DO - 10.1063/1.2728752

M3 - Journal article

VL - 92

SP - 172106

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 17

ER -