Standard
Mid-infrared ring laser. . /
Krier, A.; Sherstnev, V. V.; Wright, D. et al.
In:
Electronics Letters, Vol. 39, No. 12, 12.06.2003, p. 916-917.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Harvard
Krier, A, Sherstnev, VV, Wright, D, Monakhov, AM & Hill, G 2003, '
Mid-infrared ring laser. .',
Electronics Letters, vol. 39, no. 12, pp. 916-917.
https://doi.org/10.1049/el:20030598
APA
Krier, A., Sherstnev, V. V., Wright, D., Monakhov, A. M., & Hill, G. (2003).
Mid-infrared ring laser. . Electronics Letters,
39(12), 916-917.
https://doi.org/10.1049/el:20030598
Vancouver
Author
Bibtex
@article{11db0cefcf9f486eaea289d9b2b6fa64,
title = "Mid-infrared ring laser. .",
abstract = "The first mid-infrared ring laser diode based on InAs and operating in the mid-infrared spectral region near 3 pin and with a maximum operating temperature of 125 K is reported. The source is based on a symmetrical double heterostructure with large band offsets.",
author = "A. Krier and Sherstnev, {V. V.} and D. Wright and Monakhov, {A. M.} and G. Hill",
year = "2003",
month = jun,
day = "12",
doi = "10.1049/el:20030598",
language = "English",
volume = "39",
pages = "916--917",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "12",
}
RIS
TY - JOUR
T1 - Mid-infrared ring laser. .
AU - Krier, A.
AU - Sherstnev, V. V.
AU - Wright, D.
AU - Monakhov, A. M.
AU - Hill, G.
PY - 2003/6/12
Y1 - 2003/6/12
N2 - The first mid-infrared ring laser diode based on InAs and operating in the mid-infrared spectral region near 3 pin and with a maximum operating temperature of 125 K is reported. The source is based on a symmetrical double heterostructure with large band offsets.
AB - The first mid-infrared ring laser diode based on InAs and operating in the mid-infrared spectral region near 3 pin and with a maximum operating temperature of 125 K is reported. The source is based on a symmetrical double heterostructure with large band offsets.
U2 - 10.1049/el:20030598
DO - 10.1049/el:20030598
M3 - Journal article
VL - 39
SP - 916
EP - 917
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 12
ER -