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Mid-infrared ring laser. .

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Mid-infrared ring laser. . / Krier, A.; Sherstnev, V. V.; Wright, D. et al.
In: Electronics Letters, Vol. 39, No. 12, 12.06.2003, p. 916-917.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Krier, A, Sherstnev, VV, Wright, D, Monakhov, AM & Hill, G 2003, 'Mid-infrared ring laser. .', Electronics Letters, vol. 39, no. 12, pp. 916-917. https://doi.org/10.1049/el:20030598

APA

Krier, A., Sherstnev, V. V., Wright, D., Monakhov, A. M., & Hill, G. (2003). Mid-infrared ring laser. . Electronics Letters, 39(12), 916-917. https://doi.org/10.1049/el:20030598

Vancouver

Krier A, Sherstnev VV, Wright D, Monakhov AM, Hill G. Mid-infrared ring laser. . Electronics Letters. 2003 Jun 12;39(12):916-917. doi: 10.1049/el:20030598

Author

Krier, A. ; Sherstnev, V. V. ; Wright, D. et al. / Mid-infrared ring laser. . In: Electronics Letters. 2003 ; Vol. 39, No. 12. pp. 916-917.

Bibtex

@article{11db0cefcf9f486eaea289d9b2b6fa64,
title = "Mid-infrared ring laser. .",
abstract = "The first mid-infrared ring laser diode based on InAs and operating in the mid-infrared spectral region near 3 pin and with a maximum operating temperature of 125 K is reported. The source is based on a symmetrical double heterostructure with large band offsets.",
author = "A. Krier and Sherstnev, {V. V.} and D. Wright and Monakhov, {A. M.} and G. Hill",
year = "2003",
month = jun,
day = "12",
doi = "10.1049/el:20030598",
language = "English",
volume = "39",
pages = "916--917",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "12",

}

RIS

TY - JOUR

T1 - Mid-infrared ring laser. .

AU - Krier, A.

AU - Sherstnev, V. V.

AU - Wright, D.

AU - Monakhov, A. M.

AU - Hill, G.

PY - 2003/6/12

Y1 - 2003/6/12

N2 - The first mid-infrared ring laser diode based on InAs and operating in the mid-infrared spectral region near 3 pin and with a maximum operating temperature of 125 K is reported. The source is based on a symmetrical double heterostructure with large band offsets.

AB - The first mid-infrared ring laser diode based on InAs and operating in the mid-infrared spectral region near 3 pin and with a maximum operating temperature of 125 K is reported. The source is based on a symmetrical double heterostructure with large band offsets.

U2 - 10.1049/el:20030598

DO - 10.1049/el:20030598

M3 - Journal article

VL - 39

SP - 916

EP - 917

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 12

ER -