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Mid-infrared whispering gallery mode ring lasers and LEDs. .

Research output: Contribution to journalJournal article

Published

  • D. A. Wright
  • V. V. Sherstnev
  • A. Krier
  • A. M. Monakhov
  • G. Hill
Journal publication date08/2003
JournalIEE PROCEEDINGS-OPTOELECTRONICS
Journal number4
Volume150
Number of pages4
Pages314-317
Original languageEnglish

Abstract

Mid-infrared ring laser diodes based on InAs grown by LPE are described. The source is based on a symmetrical double heterostructure with large band offsets that operates in a whispering gallery mode. For low drive cur-rents, the device exhibited superluminescence and very strong spectral tuning. At higher current, coherent emission has been observed from 380 mum diameter devices, at 3.017 mum at a temperature of 80 K. The temperature dependence of the electroluminescence emission spectra and the light-current characteristics were also measured. The lasers have a maximum operating temperature of 125 K with a peak output power of 5 mW.