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Mid-infrared whispering gallery mode ring lasers and LEDs. .

Research output: Contribution to journalJournal article


  • D. A. Wright
  • V. V. Sherstnev
  • A. Krier
  • A. M. Monakhov
  • G. Hill
<mark>Journal publication date</mark>08/2003
<mark>Journal</mark>IEE Proceedings - Optoelectronics
Issue number4
Number of pages4
Pages (from-to)314-317
<mark>Original language</mark>English


Mid-infrared ring laser diodes based on InAs grown by LPE are described. The source is based on a symmetrical double heterostructure with large band offsets that operates in a whispering gallery mode. For low drive cur-rents, the device exhibited superluminescence and very strong spectral tuning. At higher current, coherent emission has been observed from 380 mum diameter devices, at 3.017 mum at a temperature of 80 K. The temperature dependence of the electroluminescence emission spectra and the light-current characteristics were also measured. The lasers have a maximum operating temperature of 125 K with a peak output power of 5 mW.