Mid-infrared ring laser diodes based on InAs grown by LPE are described. The source is based on a symmetrical double heterostructure with large band offsets that operates in a whispering gallery mode. For low drive cur-rents, the device exhibited superluminescence and very strong spectral tuning. At higher current, coherent emission has been observed from 380 mum diameter devices, at 3.017 mum at a temperature of 80 K. The temperature dependence of the electroluminescence emission spectra and the light-current characteristics were also measured. The lasers have a maximum operating temperature of 125 K with a peak output power of 5 mW.