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Mid-infrared whispering gallery mode ring lasers and LEDs. .

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published

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Mid-infrared whispering gallery mode ring lasers and LEDs. . / Wright, D. A.; Sherstnev, V. V.; Krier, A. et al.
In: IEE Proceedings - Optoelectronics, Vol. 150, No. 4, 08.2003, p. 314-317.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Wright, DA, Sherstnev, VV, Krier, A, Monakhov, AM & Hill, G 2003, 'Mid-infrared whispering gallery mode ring lasers and LEDs. .', IEE Proceedings - Optoelectronics, vol. 150, no. 4, pp. 314-317. https://doi.org/10.1049/ip-opt:20030786

APA

Wright, D. A., Sherstnev, V. V., Krier, A., Monakhov, A. M., & Hill, G. (2003). Mid-infrared whispering gallery mode ring lasers and LEDs. . IEE Proceedings - Optoelectronics, 150(4), 314-317. https://doi.org/10.1049/ip-opt:20030786

Vancouver

Wright DA, Sherstnev VV, Krier A, Monakhov AM, Hill G. Mid-infrared whispering gallery mode ring lasers and LEDs. . IEE Proceedings - Optoelectronics. 2003 Aug;150(4):314-317. doi: 10.1049/ip-opt:20030786

Author

Wright, D. A. ; Sherstnev, V. V. ; Krier, A. et al. / Mid-infrared whispering gallery mode ring lasers and LEDs. . In: IEE Proceedings - Optoelectronics. 2003 ; Vol. 150, No. 4. pp. 314-317.

Bibtex

@article{107505066dc341bbaf1d0e2a6519163c,
title = "Mid-infrared whispering gallery mode ring lasers and LEDs. .",
abstract = "Mid-infrared ring laser diodes based on InAs grown by LPE are described. The source is based on a symmetrical double heterostructure with large band offsets that operates in a whispering gallery mode. For low drive cur-rents, the device exhibited superluminescence and very strong spectral tuning. At higher current, coherent emission has been observed from 380 mum diameter devices, at 3.017 mum at a temperature of 80 K. The temperature dependence of the electroluminescence emission spectra and the light-current characteristics were also measured. The lasers have a maximum operating temperature of 125 K with a peak output power of 5 mW.",
author = "Wright, {D. A.} and Sherstnev, {V. V.} and A. Krier and Monakhov, {A. M.} and G. Hill",
year = "2003",
month = aug,
doi = "10.1049/ip-opt:20030786",
language = "English",
volume = "150",
pages = "314--317",
journal = "IEE Proceedings - Optoelectronics",
issn = "1350-2433",
publisher = "Institute of Electrical Engineers",
number = "4",

}

RIS

TY - JOUR

T1 - Mid-infrared whispering gallery mode ring lasers and LEDs. .

AU - Wright, D. A.

AU - Sherstnev, V. V.

AU - Krier, A.

AU - Monakhov, A. M.

AU - Hill, G.

PY - 2003/8

Y1 - 2003/8

N2 - Mid-infrared ring laser diodes based on InAs grown by LPE are described. The source is based on a symmetrical double heterostructure with large band offsets that operates in a whispering gallery mode. For low drive cur-rents, the device exhibited superluminescence and very strong spectral tuning. At higher current, coherent emission has been observed from 380 mum diameter devices, at 3.017 mum at a temperature of 80 K. The temperature dependence of the electroluminescence emission spectra and the light-current characteristics were also measured. The lasers have a maximum operating temperature of 125 K with a peak output power of 5 mW.

AB - Mid-infrared ring laser diodes based on InAs grown by LPE are described. The source is based on a symmetrical double heterostructure with large band offsets that operates in a whispering gallery mode. For low drive cur-rents, the device exhibited superluminescence and very strong spectral tuning. At higher current, coherent emission has been observed from 380 mum diameter devices, at 3.017 mum at a temperature of 80 K. The temperature dependence of the electroluminescence emission spectra and the light-current characteristics were also measured. The lasers have a maximum operating temperature of 125 K with a peak output power of 5 mW.

U2 - 10.1049/ip-opt:20030786

DO - 10.1049/ip-opt:20030786

M3 - Journal article

VL - 150

SP - 314

EP - 317

JO - IEE Proceedings - Optoelectronics

JF - IEE Proceedings - Optoelectronics

SN - 1350-2433

IS - 4

ER -