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Modelling of InAs thin layer growth from the liquid phase. .

Research output: Contribution to journalJournal article

Published

Journal publication date06/2000
JournalIEE PROCEEDINGS-OPTOELECTRONICS
Journal number3
Volume147
Number of pages3
Pages222-224
Original languageEnglish

Abstract

InAs quantum wells have been grown using the rapid slider liquid phase epitaxial growth technique. Analysis of the layer thickness data as a function of supercooling and contact time revealed the presence of two different growth mechanisms. A mathematical model of the epitaxial growth bared around simple assumptions relating to melt rolling has been shown to give a good explanation of the experimental findings and also provides an integrated mathematical description of the growth phenomena.