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Modelling of InAs thin layer growth from the liquid phase. .

Research output: Contribution to journalJournal article


<mark>Journal publication date</mark>06/2000
<mark>Journal</mark>IEE Proceedings - Optoelectronics
Issue number3
Number of pages3
Pages (from-to)222-224
<mark>Original language</mark>English


InAs quantum wells have been grown using the rapid slider liquid phase epitaxial growth technique. Analysis of the layer thickness data as a function of supercooling and contact time revealed the presence of two different growth mechanisms. A mathematical model of the epitaxial growth bared around simple assumptions relating to melt rolling has been shown to give a good explanation of the experimental findings and also provides an integrated mathematical description of the growth phenomena.