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Modelling of InAs thin layer growth from the liquid phase. .

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Modelling of InAs thin layer growth from the liquid phase. . / Krier, A.; Labadi, Z.
In: IEE Proceedings - Optoelectronics, Vol. 147, No. 3, 06.2000, p. 222-224.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Krier, A & Labadi, Z 2000, 'Modelling of InAs thin layer growth from the liquid phase. .', IEE Proceedings - Optoelectronics, vol. 147, no. 3, pp. 222-224. https://doi.org/10.1049/ip-opt:20000620

APA

Krier, A., & Labadi, Z. (2000). Modelling of InAs thin layer growth from the liquid phase. . IEE Proceedings - Optoelectronics, 147(3), 222-224. https://doi.org/10.1049/ip-opt:20000620

Vancouver

Krier A, Labadi Z. Modelling of InAs thin layer growth from the liquid phase. . IEE Proceedings - Optoelectronics. 2000 Jun;147(3):222-224. doi: 10.1049/ip-opt:20000620

Author

Krier, A. ; Labadi, Z. / Modelling of InAs thin layer growth from the liquid phase. . In: IEE Proceedings - Optoelectronics. 2000 ; Vol. 147, No. 3. pp. 222-224.

Bibtex

@article{c9c3c00c74aa4c3e96a3114201f3b707,
title = "Modelling of InAs thin layer growth from the liquid phase. .",
abstract = "InAs quantum wells have been grown using the rapid slider liquid phase epitaxial growth technique. Analysis of the layer thickness data as a function of supercooling and contact time revealed the presence of two different growth mechanisms. A mathematical model of the epitaxial growth bared around simple assumptions relating to melt rolling has been shown to give a good explanation of the experimental findings and also provides an integrated mathematical description of the growth phenomena.",
author = "A. Krier and Z. Labadi",
year = "2000",
month = jun,
doi = "10.1049/ip-opt:20000620",
language = "English",
volume = "147",
pages = "222--224",
journal = "IEE Proceedings - Optoelectronics",
issn = "1350-2433",
publisher = "Institute of Electrical Engineers",
number = "3",

}

RIS

TY - JOUR

T1 - Modelling of InAs thin layer growth from the liquid phase. .

AU - Krier, A.

AU - Labadi, Z.

PY - 2000/6

Y1 - 2000/6

N2 - InAs quantum wells have been grown using the rapid slider liquid phase epitaxial growth technique. Analysis of the layer thickness data as a function of supercooling and contact time revealed the presence of two different growth mechanisms. A mathematical model of the epitaxial growth bared around simple assumptions relating to melt rolling has been shown to give a good explanation of the experimental findings and also provides an integrated mathematical description of the growth phenomena.

AB - InAs quantum wells have been grown using the rapid slider liquid phase epitaxial growth technique. Analysis of the layer thickness data as a function of supercooling and contact time revealed the presence of two different growth mechanisms. A mathematical model of the epitaxial growth bared around simple assumptions relating to melt rolling has been shown to give a good explanation of the experimental findings and also provides an integrated mathematical description of the growth phenomena.

U2 - 10.1049/ip-opt:20000620

DO - 10.1049/ip-opt:20000620

M3 - Journal article

VL - 147

SP - 222

EP - 224

JO - IEE Proceedings - Optoelectronics

JF - IEE Proceedings - Optoelectronics

SN - 1350-2433

IS - 3

ER -