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Molecular Bridging of Silicon Nanogaps

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Molecular Bridging of Silicon Nanogaps. / Ashwell, Geoff; Phillips, Laurie J.; Robinson, Benjamin J.; Urasinska-Wojcik, Barbara; Lambert, Colin J.; Grace, Iain M.; Bryce, Martin R.; Jitchati, Rukkiat; Tavasli, Mustafa; Cox, Timothy I.; Sage, Ian C.; Tuffin, Rachel P.; Ray, Shona.

In: ACS Nano, Vol. 4, No. 12, 12.2010, p. 7401-7406.

Research output: Contribution to journalJournal article

Harvard

Ashwell, G, Phillips, LJ, Robinson, BJ, Urasinska-Wojcik, B, Lambert, CJ, Grace, IM, Bryce, MR, Jitchati, R, Tavasli, M, Cox, TI, Sage, IC, Tuffin, RP & Ray, S 2010, 'Molecular Bridging of Silicon Nanogaps', ACS Nano, vol. 4, no. 12, pp. 7401-7406. https://doi.org/10.1021/nn102460z

APA

Ashwell, G., Phillips, L. J., Robinson, B. J., Urasinska-Wojcik, B., Lambert, C. J., Grace, I. M., Bryce, M. R., Jitchati, R., Tavasli, M., Cox, T. I., Sage, I. C., Tuffin, R. P., & Ray, S. (2010). Molecular Bridging of Silicon Nanogaps. ACS Nano, 4(12), 7401-7406. https://doi.org/10.1021/nn102460z

Vancouver

Ashwell G, Phillips LJ, Robinson BJ, Urasinska-Wojcik B, Lambert CJ, Grace IM et al. Molecular Bridging of Silicon Nanogaps. ACS Nano. 2010 Dec;4(12):7401-7406. https://doi.org/10.1021/nn102460z

Author

Ashwell, Geoff ; Phillips, Laurie J. ; Robinson, Benjamin J. ; Urasinska-Wojcik, Barbara ; Lambert, Colin J. ; Grace, Iain M. ; Bryce, Martin R. ; Jitchati, Rukkiat ; Tavasli, Mustafa ; Cox, Timothy I. ; Sage, Ian C. ; Tuffin, Rachel P. ; Ray, Shona. / Molecular Bridging of Silicon Nanogaps. In: ACS Nano. 2010 ; Vol. 4, No. 12. pp. 7401-7406.

Bibtex

@article{d8d47865d87f4469ace4277a450313ac,
title = "Molecular Bridging of Silicon Nanogaps",
abstract = "The highly doped electrodes of a vertical silicon nanogap device have been bridged by a 5.85 nm long molecular wire, which was synthesized in situ by grafting 4-ethynylbenzaldehyde via C-Si links to the top and bottom electrodes and thereafter by coupling an amino-terminated fluorene unit to the aldehyde groups of the activated electrode surfaces. The number of bridging molecules is constrained by relying on surface roughness to match the 5.85 nm length with an electrode gap that is nominally 1 nm wider and may be controlled by varying the reaction time: the device current increases from <= 1 pA at 1 V following the initial grafting step to 10-100 nA at 1 V when reacted for 5-15 min with the amino-terminated linker and 10 mu A when reacted for 16-53 h. It is the first time that both ends of a molecular wire have been directly grafted to silicon electrodes, and these molecule-Induced changes are reversible. The bridges detach when the device Is rinsed with dilute add solution, which breaks the imine links of the in situ formed wire and causes the current to revert to the subpicoampere leakage value of the 4-ethynylbenzaldehyde-grafted nanogap structure.",
author = "Geoff Ashwell and Phillips, {Laurie J.} and Robinson, {Benjamin J.} and Barbara Urasinska-Wojcik and Lambert, {Colin J.} and Grace, {Iain M.} and Bryce, {Martin R.} and Rukkiat Jitchati and Mustafa Tavasli and Cox, {Timothy I.} and Sage, {Ian C.} and Tuffin, {Rachel P.} and Shona Ray",
year = "2010",
month = dec,
doi = "10.1021/nn102460z",
language = "English",
volume = "4",
pages = "7401--7406",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "12",

}

RIS

TY - JOUR

T1 - Molecular Bridging of Silicon Nanogaps

AU - Ashwell, Geoff

AU - Phillips, Laurie J.

AU - Robinson, Benjamin J.

AU - Urasinska-Wojcik, Barbara

AU - Lambert, Colin J.

AU - Grace, Iain M.

AU - Bryce, Martin R.

AU - Jitchati, Rukkiat

AU - Tavasli, Mustafa

AU - Cox, Timothy I.

AU - Sage, Ian C.

AU - Tuffin, Rachel P.

AU - Ray, Shona

PY - 2010/12

Y1 - 2010/12

N2 - The highly doped electrodes of a vertical silicon nanogap device have been bridged by a 5.85 nm long molecular wire, which was synthesized in situ by grafting 4-ethynylbenzaldehyde via C-Si links to the top and bottom electrodes and thereafter by coupling an amino-terminated fluorene unit to the aldehyde groups of the activated electrode surfaces. The number of bridging molecules is constrained by relying on surface roughness to match the 5.85 nm length with an electrode gap that is nominally 1 nm wider and may be controlled by varying the reaction time: the device current increases from <= 1 pA at 1 V following the initial grafting step to 10-100 nA at 1 V when reacted for 5-15 min with the amino-terminated linker and 10 mu A when reacted for 16-53 h. It is the first time that both ends of a molecular wire have been directly grafted to silicon electrodes, and these molecule-Induced changes are reversible. The bridges detach when the device Is rinsed with dilute add solution, which breaks the imine links of the in situ formed wire and causes the current to revert to the subpicoampere leakage value of the 4-ethynylbenzaldehyde-grafted nanogap structure.

AB - The highly doped electrodes of a vertical silicon nanogap device have been bridged by a 5.85 nm long molecular wire, which was synthesized in situ by grafting 4-ethynylbenzaldehyde via C-Si links to the top and bottom electrodes and thereafter by coupling an amino-terminated fluorene unit to the aldehyde groups of the activated electrode surfaces. The number of bridging molecules is constrained by relying on surface roughness to match the 5.85 nm length with an electrode gap that is nominally 1 nm wider and may be controlled by varying the reaction time: the device current increases from <= 1 pA at 1 V following the initial grafting step to 10-100 nA at 1 V when reacted for 5-15 min with the amino-terminated linker and 10 mu A when reacted for 16-53 h. It is the first time that both ends of a molecular wire have been directly grafted to silicon electrodes, and these molecule-Induced changes are reversible. The bridges detach when the device Is rinsed with dilute add solution, which breaks the imine links of the in situ formed wire and causes the current to revert to the subpicoampere leakage value of the 4-ethynylbenzaldehyde-grafted nanogap structure.

UR - http://www.scopus.com/inward/record.url?scp=78650735951&partnerID=8YFLogxK

U2 - 10.1021/nn102460z

DO - 10.1021/nn102460z

M3 - Journal article

VL - 4

SP - 7401

EP - 7406

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 12

ER -