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Nano-CNC machining of sub-THz vacuum electron devices

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Nano-CNC machining of sub-THz vacuum electron devices. / Gamzina, Diana; Himes, Logan; Barchfeld, Robert et al.
In: IEEE Transactions on Electron Devices, Vol. 63, No. 10, 10.2016, p. 4067-4073.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Gamzina, D, Himes, L, Barchfeld, R, Zheng, Y, Popovic, B, Paoloni, C, Choi, E & Luhmann Jr., NC 2016, 'Nano-CNC machining of sub-THz vacuum electron devices', IEEE Transactions on Electron Devices, vol. 63, no. 10, pp. 4067-4073. https://doi.org/10.1109/TED.2016.2594027

APA

Gamzina, D., Himes, L., Barchfeld, R., Zheng, Y., Popovic, B., Paoloni, C., Choi, E., & Luhmann Jr., N. C. (2016). Nano-CNC machining of sub-THz vacuum electron devices. IEEE Transactions on Electron Devices, 63(10), 4067-4073. https://doi.org/10.1109/TED.2016.2594027

Vancouver

Gamzina D, Himes L, Barchfeld R, Zheng Y, Popovic B, Paoloni C et al. Nano-CNC machining of sub-THz vacuum electron devices. IEEE Transactions on Electron Devices. 2016 Oct;63(10):4067-4073. Epub 2016 Aug 8. doi: 10.1109/TED.2016.2594027

Author

Gamzina, Diana ; Himes, Logan ; Barchfeld, Robert et al. / Nano-CNC machining of sub-THz vacuum electron devices. In: IEEE Transactions on Electron Devices. 2016 ; Vol. 63, No. 10. pp. 4067-4073.

Bibtex

@article{8da879a7738b48819f798b657e78e035,
title = "Nano-CNC machining of sub-THz vacuum electron devices",
abstract = "Nano-computer numerical control (CNC) machining technology is employed for the fabrication of sub-THz (100-1000 GHz) vacuum electron devices. Submicron feature tolerances and placement accuracy have been achieved and surface roughness of a few tens of nanometers has been demonstrated providing high-quality radio frequency (RF) transmission and reflection parameters on the tested circuit structures. Details of the manufacturing approach are reported for the following devices: W-band sheet beam (SB) klystron, two designs of a 220-GHz SB double-staggered grating traveling wave tube (TWT), 263-GHz SB TWT amplifier for an electron paramagnetic resonance spectrometer, 346-GHz SB backward wave oscillator for fusion plasma diagnostics, 346-GHz pencil beam backward wave oscillator, and 270-GHz pencil beam folded waveguide TWT self-driving amplifier. Application of the nano-CNC machining to nanocomposite scandate tungsten cathodes as well as to passive RF components is also discussed.",
author = "Diana Gamzina and Logan Himes and Robert Barchfeld and Yuan Zheng and Branko Popovic and Claudio Paoloni and Eunmi Choi and {Luhmann Jr.}, {Neville C.}",
note = "{\textcopyright}2016 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE",
year = "2016",
month = oct,
doi = "10.1109/TED.2016.2594027",
language = "English",
volume = "63",
pages = "4067--4073",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

RIS

TY - JOUR

T1 - Nano-CNC machining of sub-THz vacuum electron devices

AU - Gamzina, Diana

AU - Himes, Logan

AU - Barchfeld, Robert

AU - Zheng, Yuan

AU - Popovic, Branko

AU - Paoloni, Claudio

AU - Choi, Eunmi

AU - Luhmann Jr., Neville C.

N1 - ©2016 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 2016/10

Y1 - 2016/10

N2 - Nano-computer numerical control (CNC) machining technology is employed for the fabrication of sub-THz (100-1000 GHz) vacuum electron devices. Submicron feature tolerances and placement accuracy have been achieved and surface roughness of a few tens of nanometers has been demonstrated providing high-quality radio frequency (RF) transmission and reflection parameters on the tested circuit structures. Details of the manufacturing approach are reported for the following devices: W-band sheet beam (SB) klystron, two designs of a 220-GHz SB double-staggered grating traveling wave tube (TWT), 263-GHz SB TWT amplifier for an electron paramagnetic resonance spectrometer, 346-GHz SB backward wave oscillator for fusion plasma diagnostics, 346-GHz pencil beam backward wave oscillator, and 270-GHz pencil beam folded waveguide TWT self-driving amplifier. Application of the nano-CNC machining to nanocomposite scandate tungsten cathodes as well as to passive RF components is also discussed.

AB - Nano-computer numerical control (CNC) machining technology is employed for the fabrication of sub-THz (100-1000 GHz) vacuum electron devices. Submicron feature tolerances and placement accuracy have been achieved and surface roughness of a few tens of nanometers has been demonstrated providing high-quality radio frequency (RF) transmission and reflection parameters on the tested circuit structures. Details of the manufacturing approach are reported for the following devices: W-band sheet beam (SB) klystron, two designs of a 220-GHz SB double-staggered grating traveling wave tube (TWT), 263-GHz SB TWT amplifier for an electron paramagnetic resonance spectrometer, 346-GHz SB backward wave oscillator for fusion plasma diagnostics, 346-GHz pencil beam backward wave oscillator, and 270-GHz pencil beam folded waveguide TWT self-driving amplifier. Application of the nano-CNC machining to nanocomposite scandate tungsten cathodes as well as to passive RF components is also discussed.

U2 - 10.1109/TED.2016.2594027

DO - 10.1109/TED.2016.2594027

M3 - Journal article

VL - 63

SP - 4067

EP - 4073

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

ER -