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Nanoscale elastic imaging: a new metrology tool for low-k dielectric integration

Research output: Contribution in Book/Report/ProceedingsConference contribution

Published

  • G. S. Shekhawat
  • Oleg Kolosov
  • G. Andrew D. Briggs
  • E. O. Shaffer
  • S. J. Martin
  • R. E. Geer
Publication date2000
Host publicationInterconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Place of publicationNew York
PublisherIEEE
Pages96-98
Number of pages3
ISBN (Print)0-7803-6327-2
Original languageEnglish

Conference

Conference3rd Annual International Interconnect Technology Conference
CitySAN FRANCISCO
Period5/06/007/06/00

Conference

Conference3rd Annual International Interconnect Technology Conference
CitySAN FRANCISCO
Period5/06/007/06/00

Abstract

A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanoscale mechanical properties of metal/low-k polymer damascence test structures. Metal and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution less than or equal to 10 nm. This technique reveals a RIE-induced hardening of the low-k polymer at the metal/polymer interface and offers new opportunities for metrological reliability evaluation of low-k integration processes.