Standard
Harvard
Shekhawat, GS, Briggs, GAD
, Kolosov, O & Geer, RE 2001,
Nanoscale elastic imaging and mechanical modulus measurements of aluminum/low-k dielectric interconnect structures. in DG Seiler, AC Diebold, TJ Shaffner, R McDonald, WM Bullis, PJ Smith & EM Secula (eds),
Characterization and metrology for ULSI Technology 2000, International Conference. American Institute of Physics, Melville, New York, pp. 449-452, International Conference on Characterization and Metrology for ULSI Technology, GAITHERSBURG,
26/06/00.
APA
Shekhawat, G. S., Briggs, G. A. D.
, Kolosov, O., & Geer, R. E. (2001).
Nanoscale elastic imaging and mechanical modulus measurements of aluminum/low-k dielectric interconnect structures. In D. G. Seiler, A. C. Diebold, T. J. Shaffner, R. McDonald, W. M. Bullis, P. J. Smith, & E. M. Secula (Eds.),
Characterization and metrology for ULSI Technology 2000, International Conference (pp. 449-452). American Institute of Physics.
Vancouver
Shekhawat GS, Briggs GAD
, Kolosov O, Geer RE.
Nanoscale elastic imaging and mechanical modulus measurements of aluminum/low-k dielectric interconnect structures. In Seiler DG, Diebold AC, Shaffner TJ, McDonald R, Bullis WM, Smith PJ, Secula EM, editors, Characterization and metrology for ULSI Technology 2000, International Conference. Melville, New York: American Institute of Physics. 2001. p. 449-452
Author
Bibtex
@inproceedings{69dfda00b6e04059bba80e7aaf608dd5,
title = "Nanoscale elastic imaging and mechanical modulus measurements of aluminum/low-k dielectric interconnect structures",
abstract = "One of the most difficult challenges in low-k integration in IC processing concerns the significant mismatch of mechanical properties between metals and most low-k dielectrics. Previously, it has not been possible to image on a nanometer length scale the local variation of mechanical properties near dielectric/liner and liner/metal interfaces. Such an ability would greatly facilitate thermal and bias-stress reliability analysis of single and multi-level low-k metallization structures by locating variations in local material modulus due to local compositional variations, stress concentration, etc... Pursuant to this, we report the development of a new technique to image such properties based on ultrasonic force microscopy (UFM). UFM utilizes an ultrasonic excitation vibration combined with conventional scanning atomic force microscopy (AEM) to probe elastic variations of a broad range of materials.",
author = "Shekhawat, {G. S.} and Briggs, {G. Andrew D.} and Oleg Kolosov and Geer, {R. E.}",
year = "2001",
language = "English",
isbn = "156396967X",
pages = "449--452",
editor = "Seiler, {David G.} and Diebold, {A. C.} and Shaffner, {T. J.} and R. McDonald and Bullis, {W. M.} and Smith, {P. J.} and Secula, {E. M.}",
booktitle = "Characterization and metrology for ULSI Technology 2000, International Conference",
publisher = "American Institute of Physics",
note = "International Conference on Characterization and Metrology for ULSI Technology ; Conference date: 26-06-2000 Through 29-06-2000",
}
RIS
TY - GEN
T1 - Nanoscale elastic imaging and mechanical modulus measurements of aluminum/low-k dielectric interconnect structures
AU - Shekhawat, G. S.
AU - Briggs, G. Andrew D.
AU - Kolosov, Oleg
AU - Geer, R. E.
PY - 2001
Y1 - 2001
N2 - One of the most difficult challenges in low-k integration in IC processing concerns the significant mismatch of mechanical properties between metals and most low-k dielectrics. Previously, it has not been possible to image on a nanometer length scale the local variation of mechanical properties near dielectric/liner and liner/metal interfaces. Such an ability would greatly facilitate thermal and bias-stress reliability analysis of single and multi-level low-k metallization structures by locating variations in local material modulus due to local compositional variations, stress concentration, etc... Pursuant to this, we report the development of a new technique to image such properties based on ultrasonic force microscopy (UFM). UFM utilizes an ultrasonic excitation vibration combined with conventional scanning atomic force microscopy (AEM) to probe elastic variations of a broad range of materials.
AB - One of the most difficult challenges in low-k integration in IC processing concerns the significant mismatch of mechanical properties between metals and most low-k dielectrics. Previously, it has not been possible to image on a nanometer length scale the local variation of mechanical properties near dielectric/liner and liner/metal interfaces. Such an ability would greatly facilitate thermal and bias-stress reliability analysis of single and multi-level low-k metallization structures by locating variations in local material modulus due to local compositional variations, stress concentration, etc... Pursuant to this, we report the development of a new technique to image such properties based on ultrasonic force microscopy (UFM). UFM utilizes an ultrasonic excitation vibration combined with conventional scanning atomic force microscopy (AEM) to probe elastic variations of a broad range of materials.
M3 - Conference contribution/Paper
SN - 156396967X
SN - 9781563969676
SP - 449
EP - 452
BT - Characterization and metrology for ULSI Technology 2000, International Conference
A2 - Seiler, David G.
A2 - Diebold, A. C.
A2 - Shaffner, T. J.
A2 - McDonald, R.
A2 - Bullis, W. M.
A2 - Smith, P. J.
A2 - Secula, E. M.
PB - American Institute of Physics
CY - Melville, New York
T2 - International Conference on Characterization and Metrology for ULSI Technology
Y2 - 26 June 2000 through 29 June 2000
ER -
