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Nanosecond switching in GeSe phase change memory films by atomic force microscopy

Research output: Contribution to journalJournal article

Published
  • Jim Bosse
  • Ilja Grishin
  • Yong Gyu Choi
  • Byung-ki Cheong
  • Suyoun Lee
  • Oleg Kolosov
  • Bryan D. Huey
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Article number053109
<mark>Journal publication date</mark>2014
<mark>Journal</mark>Applied Physics Letters
Issue number5
Volume104
Number of pages4
Publication statusPublished
Early online date6/02/14
Original languageEnglish

Abstract


Nanosecond scale threshold switching is investigated with conducting atomic force microscopy (AFM) for an amorphous GeSe film. Switched bits exhibit 2–3 orders of magnitude variations in conductivity, as demonstrated in phase change based memory devices. Through the nm-scale AFM probe, this crystallization was achieved with pulse durations of as low as 15 ns, the fastest reported with scanning probe based methods. Conductance AFM imaging of the switched bits further reveals correlations between the switched volume, pulse amplitude, and pulse duration. The influence of film heterogeneities on switching is also directly detected, which is of tremendous importance for optimal device performance.