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Nanosecond switching in GeSe phase change memory films by atomic force microscopy

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Nanosecond switching in GeSe phase change memory films by atomic force microscopy. / Bosse, Jim; Grishin, Ilja; Choi, Yong Gyu et al.
In: Applied Physics Letters, Vol. 104, No. 5, 053109, 2014.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Bosse, J, Grishin, I, Choi, YG, Cheong, B, Lee, S, Kolosov, O & Huey, BD 2014, 'Nanosecond switching in GeSe phase change memory films by atomic force microscopy', Applied Physics Letters, vol. 104, no. 5, 053109. https://doi.org/10.1063/1.4863495

APA

Bosse, J., Grishin, I., Choi, Y. G., Cheong, B., Lee, S., Kolosov, O., & Huey, B. D. (2014). Nanosecond switching in GeSe phase change memory films by atomic force microscopy. Applied Physics Letters, 104(5), Article 053109. https://doi.org/10.1063/1.4863495

Vancouver

Bosse J, Grishin I, Choi YG, Cheong B, Lee S, Kolosov O et al. Nanosecond switching in GeSe phase change memory films by atomic force microscopy. Applied Physics Letters. 2014;104(5):053109. Epub 2014 Feb 6. doi: 10.1063/1.4863495

Author

Bosse, Jim ; Grishin, Ilja ; Choi, Yong Gyu et al. / Nanosecond switching in GeSe phase change memory films by atomic force microscopy. In: Applied Physics Letters. 2014 ; Vol. 104, No. 5.

Bibtex

@article{4bdf0faf43804826b8afad6b8b044bd5,
title = "Nanosecond switching in GeSe phase change memory films by atomic force microscopy",
abstract = "Nanosecond scale threshold switching is investigated with conducting atomic force microscopy (AFM) for an amorphous GeSe film. Switched bits exhibit 2–3 orders of magnitude variations in conductivity, as demonstrated in phase change based memory devices. Through the nm-scale AFM probe, this crystallization was achieved with pulse durations of as low as 15 ns, the fastest reported with scanning probe based methods. Conductance AFM imaging of the switched bits further reveals correlations between the switched volume, pulse amplitude, and pulse duration. The influence of film heterogeneities on switching is also directly detected, which is of tremendous importance for optimal device performance.",
keywords = "AFM, phase change materials, conductive-AFM, phase change memory",
author = "Jim Bosse and Ilja Grishin and Choi, {Yong Gyu} and Byung-ki Cheong and Suyoun Lee and Oleg Kolosov and Huey, {Bryan D.}",
year = "2014",
doi = "10.1063/1.4863495",
language = "English",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "5",

}

RIS

TY - JOUR

T1 - Nanosecond switching in GeSe phase change memory films by atomic force microscopy

AU - Bosse, Jim

AU - Grishin, Ilja

AU - Choi, Yong Gyu

AU - Cheong, Byung-ki

AU - Lee, Suyoun

AU - Kolosov, Oleg

AU - Huey, Bryan D.

PY - 2014

Y1 - 2014

N2 - Nanosecond scale threshold switching is investigated with conducting atomic force microscopy (AFM) for an amorphous GeSe film. Switched bits exhibit 2–3 orders of magnitude variations in conductivity, as demonstrated in phase change based memory devices. Through the nm-scale AFM probe, this crystallization was achieved with pulse durations of as low as 15 ns, the fastest reported with scanning probe based methods. Conductance AFM imaging of the switched bits further reveals correlations between the switched volume, pulse amplitude, and pulse duration. The influence of film heterogeneities on switching is also directly detected, which is of tremendous importance for optimal device performance.

AB - Nanosecond scale threshold switching is investigated with conducting atomic force microscopy (AFM) for an amorphous GeSe film. Switched bits exhibit 2–3 orders of magnitude variations in conductivity, as demonstrated in phase change based memory devices. Through the nm-scale AFM probe, this crystallization was achieved with pulse durations of as low as 15 ns, the fastest reported with scanning probe based methods. Conductance AFM imaging of the switched bits further reveals correlations between the switched volume, pulse amplitude, and pulse duration. The influence of film heterogeneities on switching is also directly detected, which is of tremendous importance for optimal device performance.

KW - AFM

KW - phase change materials

KW - conductive-AFM

KW - phase change memory

U2 - 10.1063/1.4863495

DO - 10.1063/1.4863495

M3 - Journal article

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 053109

ER -