We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK


97% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Negative differential resistance and electrolum...
View graph of relations

« Back

Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. .

Research output: Contribution to journalJournal article


<mark>Journal publication date</mark>7/02/2005
<mark>Journal</mark>Applied Physics Letters
<mark>Original language</mark>English


Negative differential resistance has been observed from InAs homojunction light-emitting diodes grown using liquid-phase epitaxy at 455 °C. The devices were characterized using current–voltage (I–V) and electroluminescence spectroscopy measurements to obtain information about structure defects in InAs. Two distinct negative differential resistance regions were observed in the forward bias I–V characteristic, consistent with carriers tunnelling into defect levels within the InAs band gap. At large forward bias, carrier injection into the defect levels resulted in electroluminescence peaking at 372 meV and then at 392 meV with increasing current. Analysis based on a native lattice complex defect indicates that carriers recombine via the defect levels at temperatures up to 175 K.

Bibliographic note

Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 86 (6), 2005 and may be found at http://link.aip.org/link/?APPLAB/86/061113/1