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Nonparabolic band effects in GaAs/AlxGa1-xAs quantum dots and ultrathin quantum wells

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Nonparabolic band effects in GaAs/AlxGa1-xAs quantum dots and ultrathin quantum wells. / Schildermans, Nele; Hayne, M ; Moshchalkov, Victor V. et al.
In: Physical review B, Vol. 72, No. 11, 115312, 14.09.2005.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Schildermans, N, Hayne, M, Moshchalkov, VV, Rastelli, A & Schmidt, OG 2005, 'Nonparabolic band effects in GaAs/AlxGa1-xAs quantum dots and ultrathin quantum wells', Physical review B, vol. 72, no. 11, 115312. https://doi.org/10.1103/PhysRevB.72.115312

APA

Schildermans, N., Hayne, M., Moshchalkov, V. V., Rastelli, A., & Schmidt, O. G. (2005). Nonparabolic band effects in GaAs/AlxGa1-xAs quantum dots and ultrathin quantum wells. Physical review B, 72(11), Article 115312. https://doi.org/10.1103/PhysRevB.72.115312

Vancouver

Schildermans N, Hayne M, Moshchalkov VV, Rastelli A, Schmidt OG. Nonparabolic band effects in GaAs/AlxGa1-xAs quantum dots and ultrathin quantum wells. Physical review B. 2005 Sept 14;72(11):115312. doi: 10.1103/PhysRevB.72.115312

Author

Schildermans, Nele ; Hayne, M ; Moshchalkov, Victor V. et al. / Nonparabolic band effects in GaAs/AlxGa1-xAs quantum dots and ultrathin quantum wells. In: Physical review B. 2005 ; Vol. 72, No. 11.

Bibtex

@article{044b6282034948cd98aaa4971b79fc8f,
title = "Nonparabolic band effects in GaAs/AlxGa1-xAs quantum dots and ultrathin quantum wells",
abstract = "We have investigated the optical properties of unstrained GaAs/AlxGa1-xAs quantum dot/well systems with the aim of studying the influence of confinement on the effective exciton mass, as determined from the photoluminescence line shift in high magnetic fields (<= 50 T). The effective exciton mass is found to be more than twice the value for bulk GaAs. We attribute this to an enhanced nonparabolicity in the GaAs conduction band at the nanoscale.",
keywords = "INPLANE EFFECTIVE-MASS, ELECTRONIC-STRUCTURE, MAGNETIC-FIELDS, ENHANCEMENT, HOLE, EXCITONS, WIRES",
author = "Nele Schildermans and M Hayne and Moshchalkov, {Victor V.} and Armando Rastelli and Schmidt, {Oliver G.}",
year = "2005",
month = sep,
day = "14",
doi = "10.1103/PhysRevB.72.115312",
language = "English",
volume = "72",
journal = "Physical review B",
issn = "1550-235X",
publisher = "AMER PHYSICAL SOC",
number = "11",

}

RIS

TY - JOUR

T1 - Nonparabolic band effects in GaAs/AlxGa1-xAs quantum dots and ultrathin quantum wells

AU - Schildermans, Nele

AU - Hayne, M

AU - Moshchalkov, Victor V.

AU - Rastelli, Armando

AU - Schmidt, Oliver G.

PY - 2005/9/14

Y1 - 2005/9/14

N2 - We have investigated the optical properties of unstrained GaAs/AlxGa1-xAs quantum dot/well systems with the aim of studying the influence of confinement on the effective exciton mass, as determined from the photoluminescence line shift in high magnetic fields (<= 50 T). The effective exciton mass is found to be more than twice the value for bulk GaAs. We attribute this to an enhanced nonparabolicity in the GaAs conduction band at the nanoscale.

AB - We have investigated the optical properties of unstrained GaAs/AlxGa1-xAs quantum dot/well systems with the aim of studying the influence of confinement on the effective exciton mass, as determined from the photoluminescence line shift in high magnetic fields (<= 50 T). The effective exciton mass is found to be more than twice the value for bulk GaAs. We attribute this to an enhanced nonparabolicity in the GaAs conduction band at the nanoscale.

KW - INPLANE EFFECTIVE-MASS

KW - ELECTRONIC-STRUCTURE

KW - MAGNETIC-FIELDS

KW - ENHANCEMENT

KW - HOLE

KW - EXCITONS

KW - WIRES

U2 - 10.1103/PhysRevB.72.115312

DO - 10.1103/PhysRevB.72.115312

M3 - Journal article

VL - 72

JO - Physical review B

JF - Physical review B

SN - 1550-235X

IS - 11

M1 - 115312

ER -