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Novel developments in the MOSFET dosemeter for neutron dosimetry applications

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Novel developments in the MOSFET dosemeter for neutron dosimetry applications. / Price, Robert A.; Benson, Chris; Joyce, Malcolm J. et al.
In: Radiation Protection Dosimetry, Vol. 110, No. 1-4, 2004, p. 283-290.

Research output: Contribution to Journal/MagazineJournal article

Harvard

Price, RA, Benson, C, Joyce, MJ, Kestell, DJ & Silvie, J 2004, 'Novel developments in the MOSFET dosemeter for neutron dosimetry applications', Radiation Protection Dosimetry, vol. 110, no. 1-4, pp. 283-290. https://doi.org/10.1093/rpd/nch202

APA

Price, R. A., Benson, C., Joyce, M. J., Kestell, D. J., & Silvie, J. (2004). Novel developments in the MOSFET dosemeter for neutron dosimetry applications. Radiation Protection Dosimetry, 110(1-4), 283-290. https://doi.org/10.1093/rpd/nch202

Vancouver

Price RA, Benson C, Joyce MJ, Kestell DJ, Silvie J. Novel developments in the MOSFET dosemeter for neutron dosimetry applications. Radiation Protection Dosimetry. 2004;110(1-4):283-290. doi: 10.1093/rpd/nch202

Author

Price, Robert A. ; Benson, Chris ; Joyce, Malcolm J. et al. / Novel developments in the MOSFET dosemeter for neutron dosimetry applications. In: Radiation Protection Dosimetry. 2004 ; Vol. 110, No. 1-4. pp. 283-290.

Bibtex

@article{be42677578944b14a602976db3b3787b,
title = "Novel developments in the MOSFET dosemeter for neutron dosimetry applications",
abstract = "The feasibility of large-geometry Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices has been assessed for both active and passive neutron dosimetry and use in radiotherapy environments. Neutron sensitivity has been enhanced with the use of polymeric cement surrounding the gate region. Neutron activation via nuclear interaction processes is a potential problem with conventionally packaged and fabricated devices. To overcome this problem, a unique low-activation device design is described. Standard Dual in-Line devices, modified with polymeric cement and boron loaded cement have been exposed to gamma rays (60Co) and neutrons (gamma-ray shielded 252Cf) to provide neutron sensitivity estimates. The results show that the neutron sensitivity can be increased by a factor of approximately three by the use of a thin layer of polymeric cement over the gate region. Essentially zero activation is observed in the activation-reduced design compared with 1000 cps in the conventional design MOSFET when both are exposed under identical conditions to a neutron field from a gamma-ray shielded 252Cf isotopic source.",
author = "Price, {Robert A.} and Chris Benson and Joyce, {Malcolm J.} and Kestell, {David J.} and Jon Silvie",
year = "2004",
doi = "10.1093/rpd/nch202",
language = "English",
volume = "110",
pages = "283--290",
journal = "Radiation Protection Dosimetry",
issn = "1742-3406",
publisher = "Oxford University Press",
number = "1-4",

}

RIS

TY - JOUR

T1 - Novel developments in the MOSFET dosemeter for neutron dosimetry applications

AU - Price, Robert A.

AU - Benson, Chris

AU - Joyce, Malcolm J.

AU - Kestell, David J.

AU - Silvie, Jon

PY - 2004

Y1 - 2004

N2 - The feasibility of large-geometry Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices has been assessed for both active and passive neutron dosimetry and use in radiotherapy environments. Neutron sensitivity has been enhanced with the use of polymeric cement surrounding the gate region. Neutron activation via nuclear interaction processes is a potential problem with conventionally packaged and fabricated devices. To overcome this problem, a unique low-activation device design is described. Standard Dual in-Line devices, modified with polymeric cement and boron loaded cement have been exposed to gamma rays (60Co) and neutrons (gamma-ray shielded 252Cf) to provide neutron sensitivity estimates. The results show that the neutron sensitivity can be increased by a factor of approximately three by the use of a thin layer of polymeric cement over the gate region. Essentially zero activation is observed in the activation-reduced design compared with 1000 cps in the conventional design MOSFET when both are exposed under identical conditions to a neutron field from a gamma-ray shielded 252Cf isotopic source.

AB - The feasibility of large-geometry Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices has been assessed for both active and passive neutron dosimetry and use in radiotherapy environments. Neutron sensitivity has been enhanced with the use of polymeric cement surrounding the gate region. Neutron activation via nuclear interaction processes is a potential problem with conventionally packaged and fabricated devices. To overcome this problem, a unique low-activation device design is described. Standard Dual in-Line devices, modified with polymeric cement and boron loaded cement have been exposed to gamma rays (60Co) and neutrons (gamma-ray shielded 252Cf) to provide neutron sensitivity estimates. The results show that the neutron sensitivity can be increased by a factor of approximately three by the use of a thin layer of polymeric cement over the gate region. Essentially zero activation is observed in the activation-reduced design compared with 1000 cps in the conventional design MOSFET when both are exposed under identical conditions to a neutron field from a gamma-ray shielded 252Cf isotopic source.

U2 - 10.1093/rpd/nch202

DO - 10.1093/rpd/nch202

M3 - Journal article

VL - 110

SP - 283

EP - 290

JO - Radiation Protection Dosimetry

JF - Radiation Protection Dosimetry

SN - 1742-3406

IS - 1-4

ER -