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Home > Research > Publications & Outputs > Nucleation and growth of He-3 crystals below 1 mK.
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Nucleation and growth of He-3 crystals below 1 mK.

Research output: Contribution to journalJournal article

Published

  • Viktor Tsepelin
  • Harry Alles
  • A. Babkin
  • J. P. H. Harme
  • Reyer Jochemsen
  • Alexander Y. Parshin
  • G. Tvalashvili
Journal publication date07/2000
JournalPhysica B: Condensed Matter
Journal number1
Volume284-28
Number of pages2
Pages351-352
Original languageEnglish

Abstract

We describe our first measurements on nucleation and growth of He-3 crystals at temperatures down to 0.55 mK. Nucleation of the solid phase initiated by high voltage has been explored. The growth kinetics of the solid-liquid interface has been studied by combining a low-temperature multiple-beam interferometer and high-precision pressure measurements. The effective growth coefficient obtained in our preliminary measurements is consistent with the data of Akimoto et al. at 0.7 mK (Physica B 255 (1998) 19).