We present and study a method to form quantum wires within a bevel-etched semiconductor heterostructure in which n-type quantum wires may be formed either next to a hole-charged region or a depleted quantum well region. By employing Schrödinger and Poisson solutions we examine the formation of the confining potential giving rise to a wire and its dependence on layer structure and magnitude of bevel angle. We also demonstrate how the basic idea can be extended to double well heterostructures in order to form additional quantum wires which can be induced in a lateral configuration. Possible advantages of the proposed method and the resulting quantum wires are discussed.