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On resonant oscillations in current-voltage characteristics of double-barrier heterostructures

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On resonant oscillations in current-voltage characteristics of double-barrier heterostructures. / Falko, Vladimir; Meshkov, S. V. .
In: Semiconductor Science and Technology, Vol. 6, No. 3, 03.1991, p. 196-200.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Falko, V & Meshkov, SV 1991, 'On resonant oscillations in current-voltage characteristics of double-barrier heterostructures', Semiconductor Science and Technology, vol. 6, no. 3, pp. 196-200. https://doi.org/10.1088/0268-1242/6/3/010

APA

Falko, V., & Meshkov, S. V. (1991). On resonant oscillations in current-voltage characteristics of double-barrier heterostructures. Semiconductor Science and Technology, 6(3), 196-200. https://doi.org/10.1088/0268-1242/6/3/010

Vancouver

Falko V, Meshkov SV. On resonant oscillations in current-voltage characteristics of double-barrier heterostructures. Semiconductor Science and Technology. 1991 Mar;6(3):196-200. doi: 10.1088/0268-1242/6/3/010

Author

Falko, Vladimir ; Meshkov, S. V. . / On resonant oscillations in current-voltage characteristics of double-barrier heterostructures. In: Semiconductor Science and Technology. 1991 ; Vol. 6, No. 3. pp. 196-200.

Bibtex

@article{7998e48e08ba4d86839a6fd0b6c281eb,
title = "On resonant oscillations in current-voltage characteristics of double-barrier heterostructures",
abstract = "A non-quantum interference mechanism in the current-voltage characteristics of double-barrier semiconductor heterostructures is suggested. It is based on the admixing of independent contributions of channels corresponding to different values of the electron momentum along the plane of device. The disturbing of coherence of channels due to non-parabolicity of the conduction band and magnetic field parallel to the plane causes a modulation of amplitude of resonant oscillations (looking like beats) in devices with wide interbarrier space. In the simplest cases the amplitude of oscillations depends on the voltage drop V and magnetic field H as sin(V3/2)/V3/2 and J1(H)/H respectively. Our consideration gives an interpretation of the experiments in a parallel magnetic field.",
author = "Vladimir Falko and Meshkov, {S. V.}",
year = "1991",
month = mar,
doi = "10.1088/0268-1242/6/3/010",
language = "English",
volume = "6",
pages = "196--200",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "3",

}

RIS

TY - JOUR

T1 - On resonant oscillations in current-voltage characteristics of double-barrier heterostructures

AU - Falko, Vladimir

AU - Meshkov, S. V.

PY - 1991/3

Y1 - 1991/3

N2 - A non-quantum interference mechanism in the current-voltage characteristics of double-barrier semiconductor heterostructures is suggested. It is based on the admixing of independent contributions of channels corresponding to different values of the electron momentum along the plane of device. The disturbing of coherence of channels due to non-parabolicity of the conduction band and magnetic field parallel to the plane causes a modulation of amplitude of resonant oscillations (looking like beats) in devices with wide interbarrier space. In the simplest cases the amplitude of oscillations depends on the voltage drop V and magnetic field H as sin(V3/2)/V3/2 and J1(H)/H respectively. Our consideration gives an interpretation of the experiments in a parallel magnetic field.

AB - A non-quantum interference mechanism in the current-voltage characteristics of double-barrier semiconductor heterostructures is suggested. It is based on the admixing of independent contributions of channels corresponding to different values of the electron momentum along the plane of device. The disturbing of coherence of channels due to non-parabolicity of the conduction band and magnetic field parallel to the plane causes a modulation of amplitude of resonant oscillations (looking like beats) in devices with wide interbarrier space. In the simplest cases the amplitude of oscillations depends on the voltage drop V and magnetic field H as sin(V3/2)/V3/2 and J1(H)/H respectively. Our consideration gives an interpretation of the experiments in a parallel magnetic field.

U2 - 10.1088/0268-1242/6/3/010

DO - 10.1088/0268-1242/6/3/010

M3 - Journal article

VL - 6

SP - 196

EP - 200

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 3

ER -