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Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application

Research output: Contribution in Book/Report/ProceedingsPaper

Published
  • P Chakrabarti
  • A Krier
  • X L Huang
  • P Fenge
  • R K Lal
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Publication date2003
Host publicationPROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II
EditorsHJ Kalinowski, MA Romero, SE Barbin
Place of PublicationNEW YORK
PublisherIEEE
Pages87-92
Number of pages6
ISBN (Print)0-7803-7824-5
<mark>Original language</mark>English

Conference

Conference10th International Microwave and Optoelectronics Conference (IMOC)
CityIguazu Falls
Period20/09/0323/09/03

Conference

Conference10th International Microwave and Optoelectronics Conference (IMOC)
CityIguazu Falls
Period20/09/0323/09/03

Abstract

An InAsSb p(+)-n junction photodetector grown on InAs substrate by Liquid Phase Epitaxy has been modeled and characterized. The results obtained on the basis of the model are compared and contrasted with experimentally measure values. Both electrical and optical characterisation of the device has been carried out for exploring the application potential of the device in absorption spectroscopy based gas sensors. The model enables one to explain the various mechanisms that shape the characteristics of the device under actual operating condition. It can also be used as a tool for optimizing the detector.