Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application

Physics

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Published

Standard

Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application. / Chakrabarti, P ; Krier, A ; Huang, X L et al.
PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II. ed. / HJ Kalinowski; MA Romero; SE Barbin. NEW YORK: IEEE, 2003. p. 87-92.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Chakrabarti, P, Krier, A, Huang, XL, Fenge, P & Lal, RK 2003, Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application. in HJ Kalinowski, MA Romero & SE Barbin (eds), PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II. IEEE, NEW YORK, pp. 87-92, 10th International Microwave and Optoelectronics Conference (IMOC), Iguazu Falls, 20/09/03.

APA

Chakrabarti, P., Krier, A., Huang, X. L., Fenge, P., & Lal, R. K. (2003). Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application. In HJ. Kalinowski, MA. Romero, & SE. Barbin (Eds.), PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II (pp. 87-92). IEEE.

Vancouver

Chakrabarti P, Krier A, Huang XL, Fenge P, Lal RK. Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application. In Kalinowski HJ, Romero MA, Barbin SE, editors, PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II. NEW YORK: IEEE. 2003. p. 87-92

Author

Chakrabarti, P ; Krier, A ; Huang, X L et al. / Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application. PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II. editor / HJ Kalinowski ; MA Romero ; SE Barbin. NEW YORK : IEEE, 2003. pp. 87-92

Bibtex

@inproceedings{f60e86eab0b1483fa6691fca5daf3346,

title = "Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application",

abstract = "An InAsSb p(+)-n junction photodetector grown on InAs substrate by Liquid Phase Epitaxy has been modeled and characterized. The results obtained on the basis of the model are compared and contrasted with experimentally measure values. Both electrical and optical characterisation of the device has been carried out for exploring the application potential of the device in absorption spectroscopy based gas sensors. The model enables one to explain the various mechanisms that shape the characteristics of the device under actual operating condition. It can also be used as a tool for optimizing the detector.",

author = "P Chakrabarti and A Krier and Huang, {X L} and P Fenge and Lal, {R K}",

year = "2003",

language = "English",

isbn = "0-7803-7824-5",

pages = "87--92",

editor = "HJ Kalinowski and MA Romero and SE Barbin",

booktitle = "PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II",

publisher = "IEEE",

note = "10th International Microwave and Optoelectronics Conference (IMOC) ; Conference date: 20-09-2003 Through 23-09-2003",

}

RIS

TY - GEN

T1 - Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application

AU - Chakrabarti, P

AU - Krier, A

AU - Huang, X L

AU - Fenge, P

AU - Lal, R K

PY - 2003

Y1 - 2003

N2 - An InAsSb p(+)-n junction photodetector grown on InAs substrate by Liquid Phase Epitaxy has been modeled and characterized. The results obtained on the basis of the model are compared and contrasted with experimentally measure values. Both electrical and optical characterisation of the device has been carried out for exploring the application potential of the device in absorption spectroscopy based gas sensors. The model enables one to explain the various mechanisms that shape the characteristics of the device under actual operating condition. It can also be used as a tool for optimizing the detector.

AB - An InAsSb p(+)-n junction photodetector grown on InAs substrate by Liquid Phase Epitaxy has been modeled and characterized. The results obtained on the basis of the model are compared and contrasted with experimentally measure values. Both electrical and optical characterisation of the device has been carried out for exploring the application potential of the device in absorption spectroscopy based gas sensors. The model enables one to explain the various mechanisms that shape the characteristics of the device under actual operating condition. It can also be used as a tool for optimizing the detector.

M3 - Conference contribution/Paper

SN - 0-7803-7824-5

SP - 87

EP - 92

BT - PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II

A2 - Kalinowski, HJ

A2 - Romero, MA

A2 - Barbin, SE

PB - IEEE

CY - NEW YORK

T2 - 10th International Microwave and Optoelectronics Conference (IMOC)

Y2 - 20 September 2003 through 23 September 2003

ER -

Research