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Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunction

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Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunction. / Kerridge, Gregory C ; Greally, Michael G ; Hayne, M et al.
In: Solid State Communications, Vol. 109, No. 4, 1999, p. 267-271.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Kerridge, GC, Greally, MG, Hayne, M, Usher, A, Plaut, AS, Brum, JA, Holland, MC & Stanley, CR 1999, 'Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunction', Solid State Communications, vol. 109, no. 4, pp. 267-271. https://doi.org/10.1016/S0038-1098(98)00528-6

APA

Kerridge, G. C., Greally, M. G., Hayne, M., Usher, A., Plaut, A. S., Brum, J. A., Holland, M. C., & Stanley, C. R. (1999). Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunction. Solid State Communications, 109(4), 267-271. https://doi.org/10.1016/S0038-1098(98)00528-6

Vancouver

Kerridge GC, Greally MG, Hayne M, Usher A, Plaut AS, Brum JA et al. Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunction. Solid State Communications. 1999;109(4):267-271. doi: 10.1016/S0038-1098(98)00528-6

Author

Kerridge, Gregory C ; Greally, Michael G ; Hayne, M et al. / Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunction. In: Solid State Communications. 1999 ; Vol. 109, No. 4. pp. 267-271.

Bibtex

@article{9aaccde8df594dd186527bdf62c76f0b,
title = "Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunction",
abstract = "We have investigated magnetically-induced charge redistribution within a delta modulation-doped GaAs-AlxGa1-xAs heterojunction structure by studying the photoluminescence due to electrons from the two-dimensional(2D) electron system recombining with photoexcited holes. At well defined values of magnetic field, charge transfer occurs between this 2D electron system and the V-shaped potential well formed in the AlxGa1-xAs by Si delta modulation-doping. This redistribution of charge is observed as discontinuities in the photoluminescence energies. From these measurements we have derived the characteristic transfer time for electrons to move between these two wells.",
keywords = "semiconductors, heterojunctions, quantum Hall effect, luminescence, FRACTIONAL QUANTUM HALL, RADIATIVE RECOMBINATION, ELECTRONS, INTEGER",
author = "Kerridge, {Gregory C} and Greally, {Michael G} and M Hayne and Alan Usher and Plaut, {Annette S} and Brum, {Jose A} and Holland, {Martin C} and Stanley, {Colin R}",
year = "1999",
doi = "10.1016/S0038-1098(98)00528-6",
language = "English",
volume = "109",
pages = "267--271",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "4",

}

RIS

TY - JOUR

T1 - Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunction

AU - Kerridge, Gregory C

AU - Greally, Michael G

AU - Hayne, M

AU - Usher, Alan

AU - Plaut, Annette S

AU - Brum, Jose A

AU - Holland, Martin C

AU - Stanley, Colin R

PY - 1999

Y1 - 1999

N2 - We have investigated magnetically-induced charge redistribution within a delta modulation-doped GaAs-AlxGa1-xAs heterojunction structure by studying the photoluminescence due to electrons from the two-dimensional(2D) electron system recombining with photoexcited holes. At well defined values of magnetic field, charge transfer occurs between this 2D electron system and the V-shaped potential well formed in the AlxGa1-xAs by Si delta modulation-doping. This redistribution of charge is observed as discontinuities in the photoluminescence energies. From these measurements we have derived the characteristic transfer time for electrons to move between these two wells.

AB - We have investigated magnetically-induced charge redistribution within a delta modulation-doped GaAs-AlxGa1-xAs heterojunction structure by studying the photoluminescence due to electrons from the two-dimensional(2D) electron system recombining with photoexcited holes. At well defined values of magnetic field, charge transfer occurs between this 2D electron system and the V-shaped potential well formed in the AlxGa1-xAs by Si delta modulation-doping. This redistribution of charge is observed as discontinuities in the photoluminescence energies. From these measurements we have derived the characteristic transfer time for electrons to move between these two wells.

KW - semiconductors

KW - heterojunctions

KW - quantum Hall effect

KW - luminescence

KW - FRACTIONAL QUANTUM HALL

KW - RADIATIVE RECOMBINATION

KW - ELECTRONS

KW - INTEGER

U2 - 10.1016/S0038-1098(98)00528-6

DO - 10.1016/S0038-1098(98)00528-6

M3 - Journal article

VL - 109

SP - 267

EP - 271

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 4

ER -