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Optical observation of single-carrier charging in type-II quantum ring ensembles

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Optical observation of single-carrier charging in type-II quantum ring ensembles. / Young, Robert; Smakman, E. P.; Sanchez, A. M. et al.
In: Applied Physics Letters, Vol. 100, No. 8, 082104, 20.02.2012, p. -.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Young, R, Smakman, EP, Sanchez, AM, Hodgson, P, Koenraad, PM & Hayne, M 2012, 'Optical observation of single-carrier charging in type-II quantum ring ensembles', Applied Physics Letters, vol. 100, no. 8, 082104, pp. -. https://doi.org/10.1063/1.3688037

APA

Young, R., Smakman, E. P., Sanchez, A. M., Hodgson, P., Koenraad, P. M., & Hayne, M. (2012). Optical observation of single-carrier charging in type-II quantum ring ensembles. Applied Physics Letters, 100(8), -. Article 082104. https://doi.org/10.1063/1.3688037

Vancouver

Young R, Smakman EP, Sanchez AM, Hodgson P, Koenraad PM, Hayne M. Optical observation of single-carrier charging in type-II quantum ring ensembles. Applied Physics Letters. 2012 Feb 20;100(8):-. 082104. doi: 10.1063/1.3688037

Author

Young, Robert ; Smakman, E. P. ; Sanchez, A. M. et al. / Optical observation of single-carrier charging in type-II quantum ring ensembles. In: Applied Physics Letters. 2012 ; Vol. 100, No. 8. pp. -.

Bibtex

@article{21c93165be1942559268722eabb0c1d6,
title = "Optical observation of single-carrier charging in type-II quantum ring ensembles",
abstract = "A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement in the GaSb ring and electron confinement in its GaAs core. The latter is responsible for a reduced inhomogeous linewidth measured in photoluminescence, in comparison to the previous measurements made on nanostructures with differing morphology in this material system. This allows the resolution of multiple peaks in the photoluminescence due to discrete charging with holes, revealing the mechanism responsible for the excitation-power-induced blueshift. (C) 2012 American Institute of Physics. [doi:10.1063/1.3688037]",
keywords = "HOLE SPIN, DOTS, SEMICONDUCTOR, STATES",
author = "Robert Young and Smakman, {E. P.} and Sanchez, {A. M.} and P. Hodgson and Koenraad, {P. M.} and M. Hayne",
note = "{\textcopyright} 2012 American Institute of Physics",
year = "2012",
month = feb,
day = "20",
doi = "10.1063/1.3688037",
language = "English",
volume = "100",
pages = "--",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "8",

}

RIS

TY - JOUR

T1 - Optical observation of single-carrier charging in type-II quantum ring ensembles

AU - Young, Robert

AU - Smakman, E. P.

AU - Sanchez, A. M.

AU - Hodgson, P.

AU - Koenraad, P. M.

AU - Hayne, M.

N1 - © 2012 American Institute of Physics

PY - 2012/2/20

Y1 - 2012/2/20

N2 - A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement in the GaSb ring and electron confinement in its GaAs core. The latter is responsible for a reduced inhomogeous linewidth measured in photoluminescence, in comparison to the previous measurements made on nanostructures with differing morphology in this material system. This allows the resolution of multiple peaks in the photoluminescence due to discrete charging with holes, revealing the mechanism responsible for the excitation-power-induced blueshift. (C) 2012 American Institute of Physics. [doi:10.1063/1.3688037]

AB - A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement in the GaSb ring and electron confinement in its GaAs core. The latter is responsible for a reduced inhomogeous linewidth measured in photoluminescence, in comparison to the previous measurements made on nanostructures with differing morphology in this material system. This allows the resolution of multiple peaks in the photoluminescence due to discrete charging with holes, revealing the mechanism responsible for the excitation-power-induced blueshift. (C) 2012 American Institute of Physics. [doi:10.1063/1.3688037]

KW - HOLE SPIN

KW - DOTS

KW - SEMICONDUCTOR

KW - STATES

UR - http://www.scopus.com/inward/record.url?scp=84857756042&partnerID=8YFLogxK

U2 - 10.1063/1.3688037

DO - 10.1063/1.3688037

M3 - Journal article

VL - 100

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 082104

ER -