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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Optoelectronic properties of atomically thin ReSSe with weak interlayer coupling
AU - Liu, Fucai
AU - Zheng, Shoujun
AU - Chaturvedi, Apoorva
AU - Zolyomi, Viktor
AU - Zhou, Jiadong
AU - Fu, Qundong
AU - Zhu, Chao
AU - Yu, Peng
AU - Zeng, Qingsheng
AU - Drummond, Neil D.
AU - Fan, Hong Jin
AU - Kloc, Christian
AU - Fal'ko, Vladimir I.
AU - He, Xuexia
AU - Liu, Zheng
N1 - © Royal Society of Chemistry 2016.
PY - 2016/3/21
Y1 - 2016/3/21
N2 - Rhenium dichalcogenides, such as ReS2 and ReSe2, have attracted a lot of interests due to the weak interlayered coupling in these materials. Studies of rhenium based dichalcogenide alloys will help us understand the differences between binary rhenium dichalcogenides. They will also extend the applications of two-dimensional (2D) materials through alloying. In this work, we studied the optoelectronic properties of ReSSe with a S and Se ratio of 1 : 1. The band gap of the ReSSe alloy is investigated by optical absorption spectra as well as theoretical calculations. The alloy shows weak interlayered coupling, as evidenced by the Raman spectrum. A field-effect transistor based on ReSSe shows typical n-type behavior with a mobility of about 3 cm2 V-1 s-1 and an on/off ratio of 105, together with the in-plane anisotropic conductivity. The device also shows good photoresponse properties, with a photoresponsivity of 8 A W-1. The results demonstrated here will provide new avenues for the study of 2D materials with weak interlayer interactions and in-plane anisotropy.
AB - Rhenium dichalcogenides, such as ReS2 and ReSe2, have attracted a lot of interests due to the weak interlayered coupling in these materials. Studies of rhenium based dichalcogenide alloys will help us understand the differences between binary rhenium dichalcogenides. They will also extend the applications of two-dimensional (2D) materials through alloying. In this work, we studied the optoelectronic properties of ReSSe with a S and Se ratio of 1 : 1. The band gap of the ReSSe alloy is investigated by optical absorption spectra as well as theoretical calculations. The alloy shows weak interlayered coupling, as evidenced by the Raman spectrum. A field-effect transistor based on ReSSe shows typical n-type behavior with a mobility of about 3 cm2 V-1 s-1 and an on/off ratio of 105, together with the in-plane anisotropic conductivity. The device also shows good photoresponse properties, with a photoresponsivity of 8 A W-1. The results demonstrated here will provide new avenues for the study of 2D materials with weak interlayer interactions and in-plane anisotropy.
U2 - 10.1039/C5NR08440G
DO - 10.1039/C5NR08440G
M3 - Journal article
VL - 8
SP - 5826
EP - 5834
JO - Nanoscale
JF - Nanoscale
SN - 2040-3364
IS - 11
ER -