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Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. .

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Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. . / Liu, P. W.; Tsai, G.; Lin, H. H. et al.
In: Applied Physics Letters, Vol. 89, No. 20, 13.11.2006, p. 201115.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Liu, PW, Tsai, G, Lin, HH, Krier, A, Zhuang, QD & Stone, M, M 2006, 'Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. .', Applied Physics Letters, vol. 89, no. 20, pp. 201115. https://doi.org/10.1063/1.2388879

APA

Liu, P. W., Tsai, G., Lin, H. H., Krier, A., Zhuang, Q. D., & Stone, M, M. (2006). Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. . Applied Physics Letters, 89(20), 201115. https://doi.org/10.1063/1.2388879

Vancouver

Liu PW, Tsai G, Lin HH, Krier A, Zhuang QD, Stone, M M. Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. . Applied Physics Letters. 2006 Nov 13;89(20):201115. doi: 10.1063/1.2388879

Author

Liu, P. W. ; Tsai, G. ; Lin, H. H. et al. / Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. . In: Applied Physics Letters. 2006 ; Vol. 89, No. 20. pp. 201115.

Bibtex

@article{c5b5f23480a84c769d2fad028bba1cdb,
title = "Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. .",
abstract = "Detailed studies are reported on the photoluminescence of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type II. By comparing the emission peak energies with a transition energy calculation it was found that both the conduction and valence bands of InAsSb alloy exhibit some bowing. The bowing parameters were determined to be in the ratio of 4:6. For a sample with Sb composition ~0.12 in the quantum well the photoluminescence emission band covers the CO2 absorption peak making it suitable for use in sources for CO2 detection.",
author = "Liu, {P. W.} and G. Tsai and Lin, {H. H.} and A. Krier and Zhuang, {Q. D.} and {Stone, M}, M.",
note = "Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 89 (20), 2006 and may be found at http://link.aip.org/link/?APPLAB/89/201115/1",
year = "2006",
month = nov,
day = "13",
doi = "10.1063/1.2388879",
language = "English",
volume = "89",
pages = "201115",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "20",

}

RIS

TY - JOUR

T1 - Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. .

AU - Liu, P. W.

AU - Tsai, G.

AU - Lin, H. H.

AU - Krier, A.

AU - Zhuang, Q. D.

AU - Stone, M, M.

N1 - Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 89 (20), 2006 and may be found at http://link.aip.org/link/?APPLAB/89/201115/1

PY - 2006/11/13

Y1 - 2006/11/13

N2 - Detailed studies are reported on the photoluminescence of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type II. By comparing the emission peak energies with a transition energy calculation it was found that both the conduction and valence bands of InAsSb alloy exhibit some bowing. The bowing parameters were determined to be in the ratio of 4:6. For a sample with Sb composition ~0.12 in the quantum well the photoluminescence emission band covers the CO2 absorption peak making it suitable for use in sources for CO2 detection.

AB - Detailed studies are reported on the photoluminescence of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type II. By comparing the emission peak energies with a transition energy calculation it was found that both the conduction and valence bands of InAsSb alloy exhibit some bowing. The bowing parameters were determined to be in the ratio of 4:6. For a sample with Sb composition ~0.12 in the quantum well the photoluminescence emission band covers the CO2 absorption peak making it suitable for use in sources for CO2 detection.

U2 - 10.1063/1.2388879

DO - 10.1063/1.2388879

M3 - Journal article

VL - 89

SP - 201115

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 20

ER -