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Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .

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Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. . / Krier, A.; Krier, S. E.; Labadi, Z.
In: Applied Physics A, Vol. 71, No. 3, 09.2000, p. 249-253.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Krier, A, Krier, SE & Labadi, Z 2000, 'Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .', Applied Physics A, vol. 71, no. 3, pp. 249-253. https://doi.org/10.1007/s003390000457

APA

Krier, A., Krier, S. E., & Labadi, Z. (2000). Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. . Applied Physics A, 71(3), 249-253. https://doi.org/10.1007/s003390000457

Vancouver

Krier A, Krier SE, Labadi Z. Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. . Applied Physics A. 2000 Sept;71(3):249-253. doi: 10.1007/s003390000457

Author

Krier, A. ; Krier, S. E. ; Labadi, Z. / Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. . In: Applied Physics A. 2000 ; Vol. 71, No. 3. pp. 249-253.

Bibtex

@article{c72440bd554f48d4ac8e0f6175a6e57f,
title = "Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .",
abstract = "InAs quantum wells have been grown using a novel rapid-slider liquid-phase epitaxial growth technique. Lattice-matched quantum wells down to 2.5 nm in thickness have been produced with InAs0.36Sb0.20P0.44 barriers. Bright photoluminescence was observed from 33-nm InAs quantum wells consistent with emission from a type-II InAsSbP/InAs system.",
author = "A. Krier and Krier, {S. E.} and Z. Labadi",
year = "2000",
month = sep,
doi = "10.1007/s003390000457",
language = "English",
volume = "71",
pages = "249--253",
journal = "Applied Physics A",
issn = "0947-8396",
publisher = "Springer Heidelberg",
number = "3",

}

RIS

TY - JOUR

T1 - Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .

AU - Krier, A.

AU - Krier, S. E.

AU - Labadi, Z.

PY - 2000/9

Y1 - 2000/9

N2 - InAs quantum wells have been grown using a novel rapid-slider liquid-phase epitaxial growth technique. Lattice-matched quantum wells down to 2.5 nm in thickness have been produced with InAs0.36Sb0.20P0.44 barriers. Bright photoluminescence was observed from 33-nm InAs quantum wells consistent with emission from a type-II InAsSbP/InAs system.

AB - InAs quantum wells have been grown using a novel rapid-slider liquid-phase epitaxial growth technique. Lattice-matched quantum wells down to 2.5 nm in thickness have been produced with InAs0.36Sb0.20P0.44 barriers. Bright photoluminescence was observed from 33-nm InAs quantum wells consistent with emission from a type-II InAsSbP/InAs system.

U2 - 10.1007/s003390000457

DO - 10.1007/s003390000457

M3 - Journal article

VL - 71

SP - 249

EP - 253

JO - Applied Physics A

JF - Applied Physics A

SN - 0947-8396

IS - 3

ER -