Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth.
AU - Chen, R.
AU - Phann, S.
AU - Sun, H. D.
AU - Zhuang, Q.
AU - Godenir, A. M. R.
AU - Krier, Anthony
PY - 2009/12/28
Y1 - 2009/12/28
N2 - We report on the comparative studies of photoluminescence (PL) properties of molecular beam epitaxy grown dilute InAsN epilayers with and without antimony (Sb) flux during the growth. Both samples exhibit strong midinfrared (MIR) emission at room temperature, while the sample with Sb flux has much higher intensity. At low temperatures, these samples exhibit totally different PL features in terms of line width, peak position, intensity, and their dependences on temperature and excitation density. Our results clearly indicate that part of Sb atoms serve as a surfactant that effectively improves the optical quality of MIR dilute nitrides.
AB - We report on the comparative studies of photoluminescence (PL) properties of molecular beam epitaxy grown dilute InAsN epilayers with and without antimony (Sb) flux during the growth. Both samples exhibit strong midinfrared (MIR) emission at room temperature, while the sample with Sb flux has much higher intensity. At low temperatures, these samples exhibit totally different PL features in terms of line width, peak position, intensity, and their dependences on temperature and excitation density. Our results clearly indicate that part of Sb atoms serve as a surfactant that effectively improves the optical quality of MIR dilute nitrides.
U2 - 10.1063/1.3280861
DO - 10.1063/1.3280861
M3 - Journal article
VL - 95
SP - 261905
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 1077-3118
IS - 26
ER -