Home > Research > Publications & Outputs > Photoluminescence properties of midinfrared dil...

Associated organisational unit

Links

Text available via DOI:

View graph of relations

Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published

Standard

Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth. / Chen, R.; Phann, S.; Sun, H. D. et al.
In: Applied Physics Letters, Vol. 95, No. 26, 28.12.2009, p. 261905.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

APA

Vancouver

Chen R, Phann S, Sun HD, Zhuang Q, Godenir AMR, Krier A. Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth. Applied Physics Letters. 2009 Dec 28;95(26):261905. doi: 10.1063/1.3280861

Author

Chen, R. ; Phann, S. ; Sun, H. D. et al. / Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth. In: Applied Physics Letters. 2009 ; Vol. 95, No. 26. pp. 261905.

Bibtex

@article{2c1021209252445fabd3445ba13f0762,
title = "Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth.",
abstract = "We report on the comparative studies of photoluminescence (PL) properties of molecular beam epitaxy grown dilute InAsN epilayers with and without antimony (Sb) flux during the growth. Both samples exhibit strong midinfrared (MIR) emission at room temperature, while the sample with Sb flux has much higher intensity. At low temperatures, these samples exhibit totally different PL features in terms of line width, peak position, intensity, and their dependences on temperature and excitation density. Our results clearly indicate that part of Sb atoms serve as a surfactant that effectively improves the optical quality of MIR dilute nitrides.",
author = "R. Chen and S. Phann and Sun, {H. D.} and Q. Zhuang and Godenir, {A. M. R.} and Anthony Krier",
year = "2009",
month = dec,
day = "28",
doi = "10.1063/1.3280861",
language = "English",
volume = "95",
pages = "261905",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "26",

}

RIS

TY - JOUR

T1 - Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth.

AU - Chen, R.

AU - Phann, S.

AU - Sun, H. D.

AU - Zhuang, Q.

AU - Godenir, A. M. R.

AU - Krier, Anthony

PY - 2009/12/28

Y1 - 2009/12/28

N2 - We report on the comparative studies of photoluminescence (PL) properties of molecular beam epitaxy grown dilute InAsN epilayers with and without antimony (Sb) flux during the growth. Both samples exhibit strong midinfrared (MIR) emission at room temperature, while the sample with Sb flux has much higher intensity. At low temperatures, these samples exhibit totally different PL features in terms of line width, peak position, intensity, and their dependences on temperature and excitation density. Our results clearly indicate that part of Sb atoms serve as a surfactant that effectively improves the optical quality of MIR dilute nitrides.

AB - We report on the comparative studies of photoluminescence (PL) properties of molecular beam epitaxy grown dilute InAsN epilayers with and without antimony (Sb) flux during the growth. Both samples exhibit strong midinfrared (MIR) emission at room temperature, while the sample with Sb flux has much higher intensity. At low temperatures, these samples exhibit totally different PL features in terms of line width, peak position, intensity, and their dependences on temperature and excitation density. Our results clearly indicate that part of Sb atoms serve as a surfactant that effectively improves the optical quality of MIR dilute nitrides.

U2 - 10.1063/1.3280861

DO - 10.1063/1.3280861

M3 - Journal article

VL - 95

SP - 261905

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 26

ER -