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    Rights statement: © © 2014 Author(s).. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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Photoluminescence studies of individual and few GaSb/GaAs quantum rings

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Photoluminescence studies of individual and few GaSb/GaAs quantum rings. / Young, M. P.; Woodhead, C. S.; Roberts, Jonny et al.
In: AIP Advances, Vol. 4, No. 11, 117127, 01.11.2014.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Young, MP, Woodhead, CS, Roberts, J, Noori, YJ, Noble, MT, Krier, A, Smakman, EP, Koenraad, PM, Hayne, M & Young, RJ 2014, 'Photoluminescence studies of individual and few GaSb/GaAs quantum rings', AIP Advances, vol. 4, no. 11, 117127. https://doi.org/10.1063/1.4902177

APA

Young, M. P., Woodhead, C. S., Roberts, J., Noori, Y. J., Noble, M. T., Krier, A., Smakman, E. P., Koenraad, P. M., Hayne, M., & Young, R. J. (2014). Photoluminescence studies of individual and few GaSb/GaAs quantum rings. AIP Advances, 4(11), Article 117127. https://doi.org/10.1063/1.4902177

Vancouver

Young MP, Woodhead CS, Roberts J, Noori YJ, Noble MT, Krier A et al. Photoluminescence studies of individual and few GaSb/GaAs quantum rings. AIP Advances. 2014 Nov 1;4(11):117127. doi: 10.1063/1.4902177

Author

Young, M. P. ; Woodhead, C. S. ; Roberts, Jonny et al. / Photoluminescence studies of individual and few GaSb/GaAs quantum rings. In: AIP Advances. 2014 ; Vol. 4, No. 11.

Bibtex

@article{69bac2d996b84296beed1c367473663d,
title = "Photoluminescence studies of individual and few GaSb/GaAs quantum rings",
abstract = "We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 µeV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift",
author = "Young, {M. P.} and Woodhead, {C. S.} and Jonny Roberts and Noori, {Y. J.} and Noble, {M. T.} and A. Krier and Smakman, {E. P.} and Koenraad, {P. M.} and M. Hayne and Young, {R. J.}",
note = "{\textcopyright} {\textcopyright} 2014 Author(s).. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.",
year = "2014",
month = nov,
day = "1",
doi = "10.1063/1.4902177",
language = "English",
volume = "4",
journal = "AIP Advances",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

RIS

TY - JOUR

T1 - Photoluminescence studies of individual and few GaSb/GaAs quantum rings

AU - Young, M. P.

AU - Woodhead, C. S.

AU - Roberts, Jonny

AU - Noori, Y. J.

AU - Noble, M. T.

AU - Krier, A.

AU - Smakman, E. P.

AU - Koenraad, P. M.

AU - Hayne, M.

AU - Young, R. J.

N1 - © © 2014 Author(s).. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

PY - 2014/11/1

Y1 - 2014/11/1

N2 - We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 µeV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift

AB - We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 µeV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift

U2 - 10.1063/1.4902177

DO - 10.1063/1.4902177

M3 - Journal article

VL - 4

JO - AIP Advances

JF - AIP Advances

IS - 11

M1 - 117127

ER -