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Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys

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Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys. / Kudrawiec, R.; Latkowska, M.; Misiewicz, J. et al.
In: Applied Physics Letters, Vol. 99, No. 1, 011904, 2011.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Kudrawiec, R, Latkowska, M, Misiewicz, J, Zhuang, Q, Godenir, AMR & Krier, A 2011, 'Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys', Applied Physics Letters, vol. 99, no. 1, 011904. https://doi.org/10.1063/1.3607479

APA

Kudrawiec, R., Latkowska, M., Misiewicz, J., Zhuang, Q., Godenir, A. M. R., & Krier, A. (2011). Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys. Applied Physics Letters, 99(1), Article 011904. https://doi.org/10.1063/1.3607479

Vancouver

Kudrawiec R, Latkowska M, Misiewicz J, Zhuang Q, Godenir AMR, Krier A. Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys. Applied Physics Letters. 2011;99(1):011904. doi: 10.1063/1.3607479

Author

Kudrawiec, R. ; Latkowska, M. ; Misiewicz, J. et al. / Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys. In: Applied Physics Letters. 2011 ; Vol. 99, No. 1.

Bibtex

@article{503d8926f10541ba992310024f3e5f17,
title = "Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys",
abstract = "Photoreflectance spectroscopy has been used to study the energy gap and spin-orbit splitting in InNAsSb alloys containing different amounts of nitrogen and antimony. It has been observed that nitrogen mainly affects the conduction band, without having any influence on the spin-orbit splitting, whereas antimony significantly modifies the spin-orbit splitting. The N- and Sb-related modifications to the band structure lead to alloys which have a spin orbit splitting larger than the energy gap. Consequently, InNAsSb alloys are very promising for use in optoelectronic devices since they offer a route towards the reduction of non-radiative Auger recombination.",
author = "R. Kudrawiec and M. Latkowska and J. Misiewicz and Qiandong Zhuang and Godenir, {A. M. R.} and Anthony Krier",
year = "2011",
doi = "10.1063/1.3607479",
language = "English",
volume = "99",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "1",

}

RIS

TY - JOUR

T1 - Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys

AU - Kudrawiec, R.

AU - Latkowska, M.

AU - Misiewicz, J.

AU - Zhuang, Qiandong

AU - Godenir, A. M. R.

AU - Krier, Anthony

PY - 2011

Y1 - 2011

N2 - Photoreflectance spectroscopy has been used to study the energy gap and spin-orbit splitting in InNAsSb alloys containing different amounts of nitrogen and antimony. It has been observed that nitrogen mainly affects the conduction band, without having any influence on the spin-orbit splitting, whereas antimony significantly modifies the spin-orbit splitting. The N- and Sb-related modifications to the band structure lead to alloys which have a spin orbit splitting larger than the energy gap. Consequently, InNAsSb alloys are very promising for use in optoelectronic devices since they offer a route towards the reduction of non-radiative Auger recombination.

AB - Photoreflectance spectroscopy has been used to study the energy gap and spin-orbit splitting in InNAsSb alloys containing different amounts of nitrogen and antimony. It has been observed that nitrogen mainly affects the conduction band, without having any influence on the spin-orbit splitting, whereas antimony significantly modifies the spin-orbit splitting. The N- and Sb-related modifications to the band structure lead to alloys which have a spin orbit splitting larger than the energy gap. Consequently, InNAsSb alloys are very promising for use in optoelectronic devices since they offer a route towards the reduction of non-radiative Auger recombination.

UR - http://www.scopus.com/inward/record.url?scp=79960522054&partnerID=8YFLogxK

U2 - 10.1063/1.3607479

DO - 10.1063/1.3607479

M3 - Journal article

AN - SCOPUS:79960522054

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 1

M1 - 011904

ER -