Home > Research > Publications & Outputs > p-i-n junction quantum dot saturable absorber m...
View graph of relations

p-i-n junction quantum dot saturable absorber mirror: electrical control of ultrafast dynamics

Research output: Contribution to journalJournal article

Published
Close
<mark>Journal publication date</mark>2012
<mark>Journal</mark>Optics Express
Issue number8
Volume20
Number of pages8
Pages (from-to)9038-9045
Publication statusPublished
Original languageEnglish

Abstract

We report on nonlinear optical properties of a p-i-n junction quantum dot saturable absorber based on InGaAs/GaAs. Absorption recovery dynamics and nonlinear reflectivity are investigated for different reverse bias and pump power conditions. A decrease in absorption recovery time of nearly two orders of magnitude is demonstrated by applying a voltage between 0 and −20 V. The saturable absorber modulation depth and saturation fluence are found to be independent from the applied reverse bias.